Incorporation of interstitial carbon during growth of heavily carbon-doped GaAs by MOVCD and MOMBE

G. E. Hoefler, J. N. Baillargeon, J. L. Klatt, K. C. Hsieh, R. S. Averback, K. Y. Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The objective of this study was to determine whether or not carbon occupies interstitial sites. Several GaAs n-i-p+$/-i-n structures were grown by molecular beam epitaxy, using carbon ans silicon as dopants.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by IOP Publishing Ltd
Pages631-634
Number of pages4
ISBN (Print)0854984100
StatePublished - 1991
EventProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA
Duration: Sep 9 1991Sep 12 1991

Publication series

NameInstitute of Physics Conference Series
Volume120
ISSN (Print)0951-3248

Other

OtherProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
CitySeattle, WA, USA
Period9/9/919/12/91

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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