@inproceedings{b820922c0e554e7caaae9f53d55320ed,
title = "Incorporation of interstitial carbon during growth of heavily carbon-doped GaAs by MOVCD and MOMBE",
abstract = "The objective of this study was to determine whether or not carbon occupies interstitial sites. Several GaAs n-i-p+$/-i-n structures were grown by molecular beam epitaxy, using carbon ans silicon as dopants.",
author = "Hoefler, {G. E.} and Baillargeon, {J. N.} and Klatt, {J. L.} and Hsieh, {K. C.} and Averback, {R. S.} and Cheng, {K. Y.}",
year = "1991",
language = "English (US)",
isbn = "0854984100",
series = "Institute of Physics Conference Series",
publisher = "Publ by IOP Publishing Ltd",
pages = "631--634",
booktitle = "Institute of Physics Conference Series",
note = "Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds ; Conference date: 09-09-1991 Through 12-09-1991",
}