InAs/InP radial nanowire heterostructures as high electron mobility devices

Keyphrases

• Field-effect Transistors 100%
• Room Temperature 100%
• On-state Current 100%
• High Electron Mobility 100%
• Core-shell Nanowires 100%
• Nanowire Heterostructures 100%
• Mobility Devices 100%
• Nanowires 50%
• Energy Dispersive X-ray Spectroscopy 50%
• Single Crystal 50%
• NWFET 50%
• Transmission Electron Microscopy 50%
• Rational Design 50%
• Electronic Properties 50%
• Rational Synthesis 50%
• Heterostructure 50%
• Quantum Confined 50%
• Epitaxial 50%
• Transistor Device 50%
• Electron Carrier 50%
• Electrical Measurements 50%
• Electron Microscopy Studies 50%
• One-dimensional Nanostructures 50%
• Gate Oxide 50%
• High Mobility 50%
• One-dimensional Systems 50%
• X-ray Spectroscopy Analysis 50%
• N-channel 50%
• Electron Mobility 50%
• Transconductance 50%
• InAs NWs 50%
• Nanoscale Building Blocks 50%
• Photonic Properties 50%
• High-speed Low-power 50%
• Nanoelectronic Circuits 50%
• High Dielectric Constant 50%
• Top Gate Structure 50%
• Quantum Coherent Transport 50%

Engineering

• Field-Effect Transistor 100%
• Heterostructures 100%
• Nanowire 100%
• Room Temperature 66%
• One Dimensional 66%
• Core-Shell 66%
• Shell Nanowires 66%
• Photonics 33%
• Nanoscale 33%
• Realization 33%
• Nanomaterial 33%
• Field Effect Transistor 33%
• Building Block 33%
• Heterojunctions 33%
• Dimensional System 33%
• Nanoelectronics 33%
• Gate Oxide 33%
• Energy Dispersive X-Ray Spectroscopy Analysis 33%
• High Dielectric Constant 33%
• Electrical Measurement 33%

Material Science

• Nanowire 100%
• Heterojunction 100%
• Electron Mobility 100%
• Field Effect Transistor 80%
• Electronic Circuit 20%
• Electronic Material 20%
• Oxide Compound 20%
• Energy-Dispersive X-Ray Spectroscopy 20%
• Transmission Electron Microscopy 20%
• Permittivity 20%
• Nanostructure 20%
• Single Crystal 20%