InAs/InP radial nanowire heterostructures as high electron mobility devices

Xiaocheng Jiang, Qihua Xiong, Sungwoo Nam, Fang Qian, Yat Li, Charles M. Lieber

Research output: Contribution to journalArticlepeer-review

Abstract

Radial core/shell nanowires (NWs) represent an important class of one-dimensional (1D) systems with substantial potential for exploring fundamental materials electronic and photonic properties. Here, we report the rational design and synthesis of InAs/lnP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers. Transmission electron microscopy studies revealed single-crystal InAs cores with epitaxial InP shells 2-3 nm in thickness, and energy-dispersive X-ray spectroscopy analysis further confirmed the composition of the designed heterostructure. Room-temperature electrical measurements on InAs/lnP NW field-effect transistors (NWFETs) showed significant improvement in the on-current and transconductance compared to InAs NWFETs fabricated in parallel, with a room-temperature electron mobility, 11 500 cm 2/Vs, substantially higher than other synthesized 1D nanostructures. In addition, NWFET devices configured with integral high dielectric constant gate oxide and top-gate structure yielded scaled on-currents up to 3.2 mA/μm, which are larger than values reported for other n-channel FETs. The design and realization of high electron mobility InAs/lnP NWs extends our toolbox of nanoscale building blocks and opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.

Original languageEnglish (US)
Pages (from-to)3214-3218
Number of pages5
JournalNano letters
Volume7
Issue number10
DOIs
StatePublished - Oct 2007

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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