InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

J. E. Bowers; A. Y. Liu; D. Jung; J. Norman; A. C. Gossard; Y. Wan; Q. Li; K. M. Lau; M. L. Lee

InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

J. E. Bowers, A. Y. Liu, D. Jung, J. Norman, A. C. Gossard, Y. Wan, Q. Li, K. M. Lau, M. L. Lee

Research output: Contribution to conference › Paper › peer-review

Abstract

We demonstrate InAs quantum dot (QD) laser diodes epitaxially grown on exact (001) Si substrates by molecular beam epitaxy. Intentional 4-6 ° offcut substrates have been traditionally employed to avoid formations that stem from the interface between III-V and Si. However, offcut substrates are not fully compatible with the standard CMOS processing. In this work, we employed on-axis GaP/Si and V-groove Si substrates to enable high performance QD laser diodes with output power of more than ∼100 mW and continuous wave (CW) threshold current of ∼30 mA at room temperature (RT).

Original language	English (US)
State	Published - 2017
Event	2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 - Indian Wells, United States Duration: May 22 2017 → May 25 2017

Other

Other	2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017
Country/Territory	United States
City	Indian Wells
Period	5/22/17 → 5/25/17

Keywords

Laser diode
Molecular beam epitaxy
Quantum Dot
Silicon photonics

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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@conference{16c4a3e94994434f8cfbf3ecba753f8f,

title = "InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates",

abstract = "We demonstrate InAs quantum dot (QD) laser diodes epitaxially grown on exact (001) Si substrates by molecular beam epitaxy. Intentional 4-6 ° offcut substrates have been traditionally employed to avoid formations that stem from the interface between III-V and Si. However, offcut substrates are not fully compatible with the standard CMOS processing. In this work, we employed on-axis GaP/Si and V-groove Si substrates to enable high performance QD laser diodes with output power of more than ∼100 mW and continuous wave (CW) threshold current of ∼30 mA at room temperature (RT).",

keywords = "Laser diode, Molecular beam epitaxy, Quantum Dot, Silicon photonics",

author = "Bowers, {J. E.} and Liu, {A. Y.} and D. Jung and J. Norman and Gossard, {A. C.} and Y. Wan and Q. Li and Lau, {K. M.} and Lee, {M. L.}",

note = "Funding Information: This work was supported by ARPA-E award (DE-FOA-0001261) and AIM photonics.; 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 ; Conference date: 22-05-2017 Through 25-05-2017",

year = "2017",

language = "English (US)",

}

TY - CONF

T1 - InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

AU - Bowers, J. E.

AU - Liu, A. Y.

AU - Jung, D.

AU - Norman, J.

AU - Gossard, A. C.

AU - Wan, Y.

AU - Li, Q.

AU - Lau, K. M.

AU - Lee, M. L.

N1 - Funding Information: This work was supported by ARPA-E award (DE-FOA-0001261) and AIM photonics.

PY - 2017

Y1 - 2017

N2 - We demonstrate InAs quantum dot (QD) laser diodes epitaxially grown on exact (001) Si substrates by molecular beam epitaxy. Intentional 4-6 ° offcut substrates have been traditionally employed to avoid formations that stem from the interface between III-V and Si. However, offcut substrates are not fully compatible with the standard CMOS processing. In this work, we employed on-axis GaP/Si and V-groove Si substrates to enable high performance QD laser diodes with output power of more than ∼100 mW and continuous wave (CW) threshold current of ∼30 mA at room temperature (RT).

AB - We demonstrate InAs quantum dot (QD) laser diodes epitaxially grown on exact (001) Si substrates by molecular beam epitaxy. Intentional 4-6 ° offcut substrates have been traditionally employed to avoid formations that stem from the interface between III-V and Si. However, offcut substrates are not fully compatible with the standard CMOS processing. In this work, we employed on-axis GaP/Si and V-groove Si substrates to enable high performance QD laser diodes with output power of more than ∼100 mW and continuous wave (CW) threshold current of ∼30 mA at room temperature (RT).

KW - Laser diode

KW - Molecular beam epitaxy

KW - Quantum Dot

KW - Silicon photonics

UR - http://www.scopus.com/inward/record.url?scp=85092802636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85092802636&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:85092802636

T2 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017

Y2 - 22 May 2017 through 25 May 2017

ER -

InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

Abstract

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