InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

J. E. Bowers, A. Y. Liu, D. Jung, J. Norman, A. C. Gossard, Y. Wan, Q. Li, K. M. Lau, M. L. Lee

Research output: Contribution to conferencePaper

Abstract

We demonstrate InAs quantum dot (QD) laser diodes epitaxially grown on exact (001) Si substrates by molecular beam epitaxy. Intentional 4-6 ° offcut substrates have been traditionally employed to avoid formations that stem from the interface between III-V and Si. However, offcut substrates are not fully compatible with the standard CMOS processing. In this work, we employed on-axis GaP/Si and V-groove Si substrates to enable high performance QD laser diodes with output power of more than ∼100 mW and continuous wave (CW) threshold current of ∼30 mA at room temperature (RT).

Original languageEnglish (US)
StatePublished - Jan 1 2017
Event2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 - Indian Wells, United States
Duration: May 22 2017May 25 2017

Other

Other2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017
CountryUnited States
CityIndian Wells
Period5/22/175/25/17

Keywords

  • Laser diode
  • Molecular beam epitaxy
  • Quantum Dot
  • Silicon photonics

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Bowers, J. E., Liu, A. Y., Jung, D., Norman, J., Gossard, A. C., Wan, Y., Li, Q., Lau, K. M., & Lee, M. L. (2017). InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates. Paper presented at 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States.