InAs quantum dot growth using bismuth as a surfactant for optoelectronic applications

Vaishno D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, S. R. Bank

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the use of a bismuth surfactant to increase self-assembled InAs quantum dot emission intensity, decrease the linewidth, and extend the emission wavelength with increasing InAs deposition, without the concomitant loss of dot density.

Original languageEnglish (US)
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
StatePublished - Jan 1 2013
Externally publishedYes
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/TerritoryUnited States
CitySan Jose, CA
Period6/9/136/14/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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