InAs quantum dot growth using bismuth as a surfactant for optoelectronic applications

Vaishno D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, S. R. Bank

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the use of a bismuth surfactant to increase self-assembled InAs quantum dot emission intensity, decrease the linewidth, and extend the emission wavelength with increasing InAs deposition, without the concomitant loss of dot density.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2013
PagesCF1I.2
StatePublished - Nov 18 2013
Externally publishedYes
EventCLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2013

Other

OtherCLEO: Science and Innovations, CLEO_SI 2013
Country/TerritoryUnited States
CitySan Jose, CA
Period6/9/136/14/13

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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