@inproceedings{2bb6981fb7ca4f9aad23977f42af2d59,
title = "InAs nanowire gate-all-around MOSFETs by heterogeneous planar VLS growth",
abstract = "High Indium content (In%) InGaAs is a promising channel material to extend Si based CMOS technology [1]. However, due to its huge lattice mismatch with commercially available III-V substrates (GaAs or InP), it is difficult to grow high In% film beyond the ultra-thin critical thickness, and therefore difficult to obtain the in-plane nanowires (NWs) based on top-down etching of a thin-film structure. Here we directly grow InAs planar NWs heterogeneously on GaAs (100) via the vapor-liquid-solid (VLS) mechanism [2] and demonstrate a planar NW gate-all-around (GAA) MOSFET device. Despite a 6.7% lattice mismatch between InAs and GaAs (leading to a critical thickness below 1 nm for thin-film growth), high-quality InAs NWs are realized, enabling good electrical performance of MOSFET with a planar InAs NW as the channel. This technology also provides a potential solution for integrating planar NW channels of different materials on a single substrate.",
keywords = "Gallium arsenide, Lead, Logic gates, Nickel",
author = "Chen Zhang and Wonsik Choi and Parsian Mohseni and Xiuling Li",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",
year = "2015",
month = aug,
day = "3",
doi = "10.1109/DRC.2015.7175616",
language = "English (US)",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "181--182",
booktitle = "73rd Annual Device Research Conference, DRC 2015",
address = "United States",
}