Abstract
The performance of AlGaInP based visible vertical cavity surface emitting lasers has been advanced with the application of new heterostructure designs and the technique of selective oxidation. Improved performance at elevated temperatures as well as high wallplug efficiency, low threshold devices have been demonstrated for devices operating in the 670-680 nm region.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 32-35 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA Duration: May 11 1997 → May 15 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering