InAlAs/InGaAs/InP MODFET's with Uniform Threshold Voltage Obtained by Selective Wet Gate Recess

M. Tong; K. Nummila; Andrew Ketterson; Ilesanmi Adesida; C. Caneau; Rajaram Bhat

doi:10.1109/55.192822

InAlAs/InGaAs/InP MODFET's with Uniform Threshold Voltage Obtained by Selective Wet Gate Recess

M. Tong, K. Nummila, Andrew Ketterson, Ilesanmi Adesida, C. Caneau, Rajaram Bhat

Research output: Contribution to journal › Article › peer-review

Abstract

Excellent uniformity in the threshold voltage, transconductance, and current-gain cutoff frequency of InAlAs / InGaAs / InP MODFET's has been achieved using a selective wet gate recess process. An etch rate ratio of 25 was achieved for InGaAs over InAlAs using a 1:1 citric acid:H₂O₂ solution. By using this solution for gate recessing, we have achieved a threshold voltage standard deviation of 15 mV and a transconductance standard deviation of 15 mS / mm for devices across a quarter of a 2-in-diameter wafer. The average threshold voltage, transconductance, and current-gain cutoff frequency of 1.0-μ.m gate-length devices were -234 mV, 355 mS / mm, and 32 GHz, respectively.

Original language	English (US)
Pages (from-to)	525-527
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	13
Issue number	10
DOIs	https://doi.org/10.1109/55.192822
State	Published - Oct 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.192822

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abstract = "Excellent uniformity in the threshold voltage, transconductance, and current-gain cutoff frequency of InAlAs / InGaAs / InP MODFET's has been achieved using a selective wet gate recess process. An etch rate ratio of 25 was achieved for InGaAs over InAlAs using a 1:1 citric acid:H2O2 solution. By using this solution for gate recessing, we have achieved a threshold voltage standard deviation of 15 mV and a transconductance standard deviation of 15 mS / mm for devices across a quarter of a 2-in-diameter wafer. The average threshold voltage, transconductance, and current-gain cutoff frequency of 1.0-μ.m gate-length devices were -234 mV, 355 mS / mm, and 32 GHz, respectively.",

author = "M. Tong and K. Nummila and Andrew Ketterson and Ilesanmi Adesida and C. Caneau and Rajaram Bhat",

note = "Funding Information: Manuscript received April 20, 1992; revised July 3, 1992. This work was supported by the National Science Foundation (NSF) under Grant ECD 89-43166 and the Joint Services Electronics Program under Grant ”014-90-5-1270. M. Tong is an IBM Resident Study Program Fellow. M. Tong, K. Nummila, A. Ketterson, and I. Adesida are with the Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. C. Caneau and R. Bhat are with Bellcore, Redbank, NJ 07701. IEEE Log Number 9203836",

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AU - Tong, M.

AU - Nummila, K.

AU - Ketterson, Andrew

AU - Adesida, Ilesanmi

AU - Caneau, C.

AU - Bhat, Rajaram

N1 - Funding Information: Manuscript received April 20, 1992; revised July 3, 1992. This work was supported by the National Science Foundation (NSF) under Grant ECD 89-43166 and the Joint Services Electronics Program under Grant ”014-90-5-1270. M. Tong is an IBM Resident Study Program Fellow. M. Tong, K. Nummila, A. Ketterson, and I. Adesida are with the Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. C. Caneau and R. Bhat are with Bellcore, Redbank, NJ 07701. IEEE Log Number 9203836

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N2 - Excellent uniformity in the threshold voltage, transconductance, and current-gain cutoff frequency of InAlAs / InGaAs / InP MODFET's has been achieved using a selective wet gate recess process. An etch rate ratio of 25 was achieved for InGaAs over InAlAs using a 1:1 citric acid:H2O2 solution. By using this solution for gate recessing, we have achieved a threshold voltage standard deviation of 15 mV and a transconductance standard deviation of 15 mS / mm for devices across a quarter of a 2-in-diameter wafer. The average threshold voltage, transconductance, and current-gain cutoff frequency of 1.0-μ.m gate-length devices were -234 mV, 355 mS / mm, and 32 GHz, respectively.

AB - Excellent uniformity in the threshold voltage, transconductance, and current-gain cutoff frequency of InAlAs / InGaAs / InP MODFET's has been achieved using a selective wet gate recess process. An etch rate ratio of 25 was achieved for InGaAs over InAlAs using a 1:1 citric acid:H2O2 solution. By using this solution for gate recessing, we have achieved a threshold voltage standard deviation of 15 mV and a transconductance standard deviation of 15 mS / mm for devices across a quarter of a 2-in-diameter wafer. The average threshold voltage, transconductance, and current-gain cutoff frequency of 1.0-μ.m gate-length devices were -234 mV, 355 mS / mm, and 32 GHz, respectively.

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InAlAs/InGaAs/InP MODFET's with Uniform Threshold Voltage Obtained by Selective Wet Gate Recess

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