InAlAs/InGaAs high electron mobility transistors (HEMT) with excellent high frequency performance were demonstrated. Device sizes of 0.25×50 μm and 0.10×50 μm showed current gain cutoff frequencies of 143 and 205 GHz, respectively. The HEMT structures were grown on a low temperature InAlAs buffer layers designed to eliminate conductive impurity spikes situated at the epitaxial/substrate interface. The highly resistive buffer layer (2×105 Ω cm) was obtained at a growth temperature of 475°C using a combination of trimethylarsenic and arsine as the arsenic sources.
|Original language||English (US)|
|Number of pages||1|
|Journal||Applied Physics Letters|
|State||Published - Dec 1 1995|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)