InAlAs/InGaAs Heterostructure FET’s Processed with Selective Reactive-Ion-Etching Gate-Recess Technology

Keyphrases

• InAlAs 100%
• Reactive Ion Etching 100%
• InGaAs Heterostructures 100%
• Gate Recess 100%
• Heterostructure FET 100%
• Transistor 33%
• Gate Length 33%
• Highly Selective 33%
• Etching Process 33%
• Current Gain Cutoff Frequency 33%
• Process-based 33%
• Extrinsic Transconductance 33%
• Threshold Voltage 33%
• Device Parameters 33%
• RF Devices 33%
• Maximum Oscillation Frequency 33%
• Selective Wet Etching 33%

Material Science

• Field Effect Transistor 100%
• Indium Gallium Arsenide 100%
• Heterojunction 100%
• Reactive Ion Etching 100%
• Transistor 50%
• Wet Etching 50%