@article{150fe6099346467797d89fd09448429b,
title = "InAlAs/InGaAs Heterostructure FET{\textquoteright}s Processed with Selective Reactive-Ion-Etching Gate-Recess Technology",
abstract = "A newly developed highly selective reactive-ion-etching process based on HBr plasma has been applied as a gate-recess technique in the fabrication of InAlAs/InGaAs heterostructure FET{\textquoteright}s. A typical 0.75-μm gate-length transistor exhibited a threshold voltage of —1.0 V, a maximum extrinsic transconductance of 600 mS/mm, an extrinsic current-gain cutoff frequency of 37 GHz, and a maximum frequency of oscillation of 90 GHz. These dc and RF device parameters compare favorably with that of a corresponding device gate-recessed with a selective wet-etching technique.",
author = "Sambhu Agarwala and K. Nummila and Ilesanmi Adesida and Catherine Caneau and Rajaram Bhat",
note = "Funding Information: Manuscript received March 29, 1993; revised June IO, 1993. This work was supported at the University of Illinois by NSF Grant ECD 89-43166, JSEP Grant N00014-90-J-1270, NSF Grant 92-02294, and URI Grant N00014-92-J-1519. S. Agarwala, K. Nummila, and I. Adesida are with the Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, Beckman Institute, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801. C. Caneau and R. Bhat are with Bell Communication Research, Red Bank, NJ 07701. IEEE Log Number 9211378.",
year = "1993",
month = sep,
doi = "10.1109/55.244718",
language = "English (US)",
volume = "14",
pages = "425--427",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}