@article{1b9e921d5b5c44b199a160cd578b870e,
title = "In Situ Strain Tuning of the Dirac Surface States in Bi2Se3 Films",
abstract = "Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudomagnetic field effects, helical flat bands, and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here we show that the Dirac surface states of the topological insulator Bi2Se3 can be reversibly tuned by an externally applied elastic strain. Performing in situ X-ray diffraction and in situ angle-resolved photoemission spectroscopy measurements during tensile testing of epitaxial Bi2Se3 films bonded onto a flexible substrate, we demonstrate elastic strains of up to 2.1% and quantify the resulting changes in the topological surface state. Our study establishes the functional relationship between the lattice and electronic structures of Bi2Se3 and, more generally, demonstrates a new route toward momentum-resolved mapping of strain-induced band structure changes.",
keywords = "ARPES, DFT, Topological surface state, XRD, in situ tensile testing, strain",
author = "David Fl{\"o}totto and Yang Bai and Chan, {Yang Hao} and Peng Chen and Xiaoxiong Wang and Paul Rossi and Xu, {Cai Zhi} and Can Zhang and Hlevyack, {Joseph A.} and Denlinger, {Jonathan D.} and Hawoong Hong and Chou, {Mei Yin} and Mittemeijer, {Eric J.} and Eckstein, {James N.} and Chiang, {Tai Chang}",
note = "Funding Information: This research is supported by (i) the U.S. National Science Foundation (Grant No. DMR-17-09945 for T.-C.C. and No. DMR-11-05998 for J.N.E.), (ii) the Deutsche Forschungsgemeinschaft (FL 974/1-1) (iii) the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Materials Science and Engineering (Award No. DE-AC02-07CH11358 for J.N.E.), (iv) the Thematic Project at Academia Sinica (AS-106-TP-A07), (v) the National Natural Science Foundation of China (No. 11204133), and (vi) the Fundamental Research Funds for the Central Universities of China (No. 30917011338). The Advanced Light Source is supported by the Director, Office of Science Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Argonne National Laboratory and work performed at the Advanced Photon Source at Argonne National Laboratory was supported by the U.S. Department of Energy (DOE), Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. Part of the work was carried out in the Central Research Facilities of the Frederick Seitz Materials Research Laboratory. Funding Information: This research is supported by (i) the U.S. National Science Foundation (Grant No. DMR-17-09945 for T.-C.C. and No. DMR-11-05998 for J.N.E.), (ii) the Deutsche Forschungsge-meinschaft (FL 974/1-1), (iii) the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Materials Science and Engineering (Award No. DE-AC02-07CH11358 for J.N.E.), (iv) the Thematic Project at Academia Sinica (AS-106-TP-A07), (v) the National Natural Science Foundation of China (No. 11204133), and (vi) the Fundamental Research Funds for the Central Universities of China (No. 30917011338). The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Argonne National Laboratory and work performed at the Advanced Photon Source at Argonne National Laboratory was supported by the U.S. Department of Energy (DOE), Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. Part of the work was carried out in the Central Research Facilities of the Frederick Seitz Materials Research Laboratory. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",
year = "2018",
month = sep,
day = "12",
doi = "10.1021/acs.nanolett.8b02105",
language = "English (US)",
volume = "18",
pages = "5628--5632",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "9",
}