Abstract
One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.
| Original language | English (US) |
|---|---|
| Title of host publication | Extreme Ultraviolet (EUV) Lithography III |
| DOIs | |
| State | Published - May 31 2012 |
| Event | Extreme Ultraviolet (EUV) Lithography III - San Jose, CA, United States Duration: Feb 13 2012 → Feb 16 2012 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 8322 |
| ISSN (Print) | 0277-786X |
Other
| Other | Extreme Ultraviolet (EUV) Lithography III |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 2/13/12 → 2/16/12 |
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Keywords
- Collector
- Etch
- Hydrogen
- Optic
- Plasma
- Sn
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
In-situ Sn contamination removal by hydrogen plasma. / Sporre, J.; Elg, D.; Andruczyk, D.; Cho, T.; Ruzic, D. N.; Srivastava, S. N.; Brandt, D. C.
Extreme Ultraviolet (EUV) Lithography III. 2012. 83222L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - In-situ Sn contamination removal by hydrogen plasma
AU - Sporre, J.
AU - Elg, D.
AU - Andruczyk, D.
AU - Cho, T.
AU - Ruzic, D. N.
AU - Srivastava, S. N.
AU - Brandt, D. C.
PY - 2012/5/31
Y1 - 2012/5/31
N2 - One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.
AB - One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.
KW - Collector
KW - Etch
KW - Hydrogen
KW - Optic
KW - Plasma
KW - Sn
UR - http://www.scopus.com/inward/record.url?scp=84861499546&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861499546&partnerID=8YFLogxK
U2 - 10.1117/12.916434
DO - 10.1117/12.916434
M3 - Conference contribution
AN - SCOPUS:84861499546
SN - 9780819489784
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Extreme Ultraviolet (EUV) Lithography III
ER -