In-situ Sn contamination removal by hydrogen plasma

J. Sporre, D. Elg, D. Andruczyk, T. Cho, D. N. Ruzic, S. N. Srivastava, D. C. Brandt

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography III
DOIs
StatePublished - May 31 2012
EventExtreme Ultraviolet (EUV) Lithography III - San Jose, CA, United States
Duration: Feb 13 2012Feb 16 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8322
ISSN (Print)0277-786X

Other

OtherExtreme Ultraviolet (EUV) Lithography III
CountryUnited States
CitySan Jose, CA
Period2/13/122/16/12

Fingerprint

Cleaning
hydrogen plasma
Contamination
cleaning
Hydrogen
cost effectiveness
contamination
Cost-effectiveness
Plasma
Cost effectiveness
Plasmas
Uniformity
accumulators
Optics
optics
Extreme ultraviolet lithography
Magnetron Sputtering
Extreme Ultraviolet Lithography
debris
Debris

Keywords

  • Collector
  • Etch
  • Hydrogen
  • Optic
  • Plasma
  • Sn

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Sporre, J., Elg, D., Andruczyk, D., Cho, T., Ruzic, D. N., Srivastava, S. N., & Brandt, D. C. (2012). In-situ Sn contamination removal by hydrogen plasma. In Extreme Ultraviolet (EUV) Lithography III [83222L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322). https://doi.org/10.1117/12.916434

In-situ Sn contamination removal by hydrogen plasma. / Sporre, J.; Elg, D.; Andruczyk, D.; Cho, T.; Ruzic, D. N.; Srivastava, S. N.; Brandt, D. C.

Extreme Ultraviolet (EUV) Lithography III. 2012. 83222L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sporre, J, Elg, D, Andruczyk, D, Cho, T, Ruzic, DN, Srivastava, SN & Brandt, DC 2012, In-situ Sn contamination removal by hydrogen plasma. in Extreme Ultraviolet (EUV) Lithography III., 83222L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8322, Extreme Ultraviolet (EUV) Lithography III, San Jose, CA, United States, 2/13/12. https://doi.org/10.1117/12.916434
Sporre J, Elg D, Andruczyk D, Cho T, Ruzic DN, Srivastava SN et al. In-situ Sn contamination removal by hydrogen plasma. In Extreme Ultraviolet (EUV) Lithography III. 2012. 83222L. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.916434
Sporre, J. ; Elg, D. ; Andruczyk, D. ; Cho, T. ; Ruzic, D. N. ; Srivastava, S. N. ; Brandt, D. C. / In-situ Sn contamination removal by hydrogen plasma. Extreme Ultraviolet (EUV) Lithography III. 2012. (Proceedings of SPIE - The International Society for Optical Engineering).
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