In-situ Sn contamination removal by hydrogen plasma

J. Sporre, D. Elg, D. Andruczyk, T. Cho, D. N. Ruzic, S. N. Srivastava, D. C. Brandt

Research output: Chapter in Book/Report/Conference proceedingConference contribution


One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography III
StatePublished - May 31 2012
EventExtreme Ultraviolet (EUV) Lithography III - San Jose, CA, United States
Duration: Feb 13 2012Feb 16 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherExtreme Ultraviolet (EUV) Lithography III
Country/TerritoryUnited States
CitySan Jose, CA


  • Collector
  • Etch
  • Hydrogen
  • Optic
  • Plasma
  • Sn

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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