In-situ Sn contamination removal by hydrogen plasma

J. Sporre; D. Elg; D. Andruczyk; T. Cho; D. N. Ruzic; S. N. Srivastava; D. C. Brandt

doi:10.1117/12.916434

In-situ Sn contamination removal by hydrogen plasma

J. Sporre, D. Elg, D. Andruczyk, T. Cho, D. N. Ruzic, S. N. Srivastava, D. C. Brandt

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.

Original language	English (US)
Title of host publication	Extreme Ultraviolet (EUV) Lithography III
DOIs	https://doi.org/10.1117/12.916434
State	Published - May 31 2012
Event	Extreme Ultraviolet (EUV) Lithography III - San Jose, CA, United States Duration: Feb 13 2012 → Feb 16 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8322
ISSN (Print)	0277-786X

Other

Other	Extreme Ultraviolet (EUV) Lithography III
Country	United States
City	San Jose, CA
Period	2/13/12 → 2/16/12

Keywords

Collector
Etch
Hydrogen
Optic
Plasma
Sn

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Sporre, J., Elg, D., Andruczyk, D., Cho, T., Ruzic, D. N., Srivastava, S. N., & Brandt, D. C. (2012). In-situ Sn contamination removal by hydrogen plasma. In Extreme Ultraviolet (EUV) Lithography III [83222L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322). https://doi.org/10.1117/12.916434

In-situ Sn contamination removal by hydrogen plasma. / Sporre, J.; Elg, D.; Andruczyk, D.; Cho, T.; Ruzic, D. N.; Srivastava, S. N.; Brandt, D. C.

Extreme Ultraviolet (EUV) Lithography III. 2012. 83222L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sporre, J, Elg, D, Andruczyk, D, Cho, T, Ruzic, DN, Srivastava, SN & Brandt, DC 2012, In-situ Sn contamination removal by hydrogen plasma. in Extreme Ultraviolet (EUV) Lithography III., 83222L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8322, Extreme Ultraviolet (EUV) Lithography III, San Jose, CA, United States, 2/13/12. https://doi.org/10.1117/12.916434

@inproceedings{b790e4c14f734af4b9f6bd00053a3852,

title = "In-situ Sn contamination removal by hydrogen plasma",

abstract = "One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.",

keywords = "Collector, Etch, Hydrogen, Optic, Plasma, Sn",

author = "J. Sporre and D. Elg and D. Andruczyk and T. Cho and Ruzic, {D. N.} and Srivastava, {S. N.} and Brandt, {D. C.}",

year = "2012",

month = may,

day = "31",

doi = "10.1117/12.916434",

language = "English (US)",

isbn = "9780819489784",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Extreme Ultraviolet (EUV) Lithography III",

note = "Extreme Ultraviolet (EUV) Lithography III ; Conference date: 13-02-2012 Through 16-02-2012",

}

TY - GEN

T1 - In-situ Sn contamination removal by hydrogen plasma

AU - Sporre, J.

AU - Elg, D.

AU - Andruczyk, D.

AU - Cho, T.

AU - Ruzic, D. N.

AU - Srivastava, S. N.

AU - Brandt, D. C.

PY - 2012/5/31

Y1 - 2012/5/31

N2 - One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.

AB - One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.

KW - Collector

KW - Etch

KW - Hydrogen

KW - Optic

KW - Plasma

KW - Sn

UR - http://www.scopus.com/inward/record.url?scp=84861499546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861499546&partnerID=8YFLogxK

U2 - 10.1117/12.916434

DO - 10.1117/12.916434

M3 - Conference contribution

AN - SCOPUS:84861499546

SN - 9780819489784

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Extreme Ultraviolet (EUV) Lithography III

T2 - Extreme Ultraviolet (EUV) Lithography III

Y2 - 13 February 2012 through 16 February 2012

ER -