@inproceedings{b790e4c14f734af4b9f6bd00053a3852,
title = "In-situ Sn contamination removal by hydrogen plasma",
abstract = "One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.",
keywords = "Collector, Etch, Hydrogen, Optic, Plasma, Sn",
author = "J. Sporre and D. Elg and D. Andruczyk and T. Cho and Ruzic, {D. N.} and Srivastava, {S. N.} and Brandt, {D. C.}",
year = "2012",
month = may,
day = "31",
doi = "10.1117/12.916434",
language = "English (US)",
isbn = "9780819489784",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Extreme Ultraviolet (EUV) Lithography III",
note = "Extreme Ultraviolet (EUV) Lithography III ; Conference date: 13-02-2012 Through 16-02-2012",
}