Radiation-induced segregation of Ni-12.7 at.% Si during 2.0 MeV He and 3.25 MeV Kr irradiation has been investigated. Using high resolution Rutherford backscattering spectrometry, the rate of segregation of Si at the irradiated surface was determined. During the He irradiation, the amount of Si segregation was found to be proportional to the square root of the dose. From the dependence of segregation on temperature, for both He and Kr irradiations, an apparent activation enthalpy of 0.3 eV was deduced for the segregation process. A comparison of the segregation rates during the He and Kr irradiations revealed that on the basis of calculated dpa rates, He irradiation is significantly (∼6 ×) more effective than Kr irradiation for inducing segregation.
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