In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication

M. Hong, K. D. Choquette, J. P. Mannaerts, L. H. Grober, R. S. Freund, D. Vakhshoori, S. N.G. Chu, H. S. Luftman, R. C. Wetzel

Research output: Contribution to journalArticlepeer-review

Abstract

Processing of III-V compound semiconductor devices in an ultra-high vacuum or a controlled environment has received much attention during the past few years. Major advantages of n- situ processing include the preservation of pristine material surface, improved device performance, and fabrication of novel devices. This paper reviews an in- situ process compatible with molecular beam epitaxy (MBE) with emphasis on the removal of oxides and surface contaminants from air-exposed GaAs and AIGaAs. We have characterized deep-etched and MBE regrown AIGaAs with the etching achieved using electron cyclotron resonance plasma treatment. A buried heterostructure vertical-cavity surface emitting laser diode fabricated using this in- situ process is presented.

Original languageEnglish (US)
Pages (from-to)625-634
Number of pages10
JournalJournal of Electronic Materials
Volume23
Issue number7
DOIs
StatePublished - Jul 1 1994
Externally publishedYes

Keywords

  • Compound semiconductors
  • in- situ process
  • molecular beam epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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