Abstract
Processing of III-V compound semiconductor devices in an ultra-high vacuum or a controlled environment has received much attention during the past few years. Major advantages of n- situ processing include the preservation of pristine material surface, improved device performance, and fabrication of novel devices. This paper reviews an in- situ process compatible with molecular beam epitaxy (MBE) with emphasis on the removal of oxides and surface contaminants from air-exposed GaAs and AIGaAs. We have characterized deep-etched and MBE regrown AIGaAs with the etching achieved using electron cyclotron resonance plasma treatment. A buried heterostructure vertical-cavity surface emitting laser diode fabricated using this in- situ process is presented.
Original language | English (US) |
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Pages (from-to) | 625-634 |
Number of pages | 10 |
Journal | Journal of Electronic Materials |
Volume | 23 |
Issue number | 7 |
DOIs | |
State | Published - Jul 1994 |
Externally published | Yes |
Keywords
- Compound semiconductors
- in- situ process
- molecular beam epitaxy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry