In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication

Processing of III-V compound semiconductor devices in an ultra-high vacuum or a controlled environment has received much attention during the past few years. Major advantages of n- situ processing include the preservation of pristine material surface, improved device performance, and fabrication of novel devices. This paper reviews an in- situ process compatible with molecular beam epitaxy (MBE) with emphasis on the removal of oxides and surface contaminants from air-exposed GaAs and AIGaAs. We have characterized deep-etched and MBE regrown AIGaAs with the etching achieved using electron cyclotron resonance plasma treatment. A buried heterostructure vertical-cavity surface emitting laser diode fabricated using this in- situ process is presented.