In-situ probing of near and below sputter-threshold ion-induced nanopatterning on GaSb(1 0 0)

O. El-Atwani, J. P. Allain, S. Ortoleva

Research output: Research - peer-reviewArticle

Abstract

This work presents in-situ near and below sputter-threshold studies for GaSb(1 0 0) at energies 50, 100 and 200 eV and current densities near 50 μAcm -2. Variation of incident particle energy probes the energy deposition distribution and its relation to surface composition. In-situ analysis is conducted over irradiation modification using Ar singly-charged ions at normal incidence of the surface using complementary techniques including: X-ray photoelectron spectroscopy (XPS) and ion-scattering spectroscopy (LEISS). The former probes 1-3 nm and the latter technique probes the first 1-2 ML or 0.3-0.6 nm. Ex-situ analysis includes HR-SEM to correlated surface morphology with surface composition studied in-situ during irradiation. Results indicate ordering of nanodot formation at fluence threshold of about 10 17 cm -2. Both XPS and LEISS identify Ga 2O 3 islands formation due to GaSb chemical affinity for oxygen followed by an initial enhancement of Ga/Sb = 1.20 ratio and then a sharp drop in Ga relative concentration with LEISS reaching a Sb-dominated terminating 1-2 nm region corresponding to the implantation depth between 50 and 200 eV. XPS shows a slight enrichment of Ga in sub-surface layers that levels to a 1:1 stoichiometry of the crystalline GaSb(1 0 0) surface.

LanguageEnglish (US)
Pages210-213
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume272
DOIs
StatePublished - Feb 1 2012
Externally publishedYes

Fingerprint

thresholds
ions
Surface structure
Irradiation
photoelectron spectroscopy
probes
x rays
irradiation
energy
Stoichiometry
Surface morphology
Current density
Spectroscopy
Scattering
Scanning electron microscopy
Oxygen
ion scattering
particle energy
stopping
affinity

Keywords

  • GaSb
  • In-situ surface characterization
  • Ion sputtering
  • Nanopatterning

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

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abstract = "This work presents in-situ near and below sputter-threshold studies for GaSb(1 0 0) at energies 50, 100 and 200 eV and current densities near 50 μAcm -2. Variation of incident particle energy probes the energy deposition distribution and its relation to surface composition. In-situ analysis is conducted over irradiation modification using Ar singly-charged ions at normal incidence of the surface using complementary techniques including: X-ray photoelectron spectroscopy (XPS) and ion-scattering spectroscopy (LEISS). The former probes 1-3 nm and the latter technique probes the first 1-2 ML or 0.3-0.6 nm. Ex-situ analysis includes HR-SEM to correlated surface morphology with surface composition studied in-situ during irradiation. Results indicate ordering of nanodot formation at fluence threshold of about 10 17 cm -2. Both XPS and LEISS identify Ga 2O 3 islands formation due to GaSb chemical affinity for oxygen followed by an initial enhancement of Ga/Sb = 1.20 ratio and then a sharp drop in Ga relative concentration with LEISS reaching a Sb-dominated terminating 1-2 nm region corresponding to the implantation depth between 50 and 200 eV. XPS shows a slight enrichment of Ga in sub-surface layers that levels to a 1:1 stoichiometry of the crystalline GaSb(1 0 0) surface.",
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author = "O. El-Atwani and Allain, {J. P.} and S. Ortoleva",
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AU - Allain,J. P.

AU - Ortoleva,S.

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N2 - This work presents in-situ near and below sputter-threshold studies for GaSb(1 0 0) at energies 50, 100 and 200 eV and current densities near 50 μAcm -2. Variation of incident particle energy probes the energy deposition distribution and its relation to surface composition. In-situ analysis is conducted over irradiation modification using Ar singly-charged ions at normal incidence of the surface using complementary techniques including: X-ray photoelectron spectroscopy (XPS) and ion-scattering spectroscopy (LEISS). The former probes 1-3 nm and the latter technique probes the first 1-2 ML or 0.3-0.6 nm. Ex-situ analysis includes HR-SEM to correlated surface morphology with surface composition studied in-situ during irradiation. Results indicate ordering of nanodot formation at fluence threshold of about 10 17 cm -2. Both XPS and LEISS identify Ga 2O 3 islands formation due to GaSb chemical affinity for oxygen followed by an initial enhancement of Ga/Sb = 1.20 ratio and then a sharp drop in Ga relative concentration with LEISS reaching a Sb-dominated terminating 1-2 nm region corresponding to the implantation depth between 50 and 200 eV. XPS shows a slight enrichment of Ga in sub-surface layers that levels to a 1:1 stoichiometry of the crystalline GaSb(1 0 0) surface.

AB - This work presents in-situ near and below sputter-threshold studies for GaSb(1 0 0) at energies 50, 100 and 200 eV and current densities near 50 μAcm -2. Variation of incident particle energy probes the energy deposition distribution and its relation to surface composition. In-situ analysis is conducted over irradiation modification using Ar singly-charged ions at normal incidence of the surface using complementary techniques including: X-ray photoelectron spectroscopy (XPS) and ion-scattering spectroscopy (LEISS). The former probes 1-3 nm and the latter technique probes the first 1-2 ML or 0.3-0.6 nm. Ex-situ analysis includes HR-SEM to correlated surface morphology with surface composition studied in-situ during irradiation. Results indicate ordering of nanodot formation at fluence threshold of about 10 17 cm -2. Both XPS and LEISS identify Ga 2O 3 islands formation due to GaSb chemical affinity for oxygen followed by an initial enhancement of Ga/Sb = 1.20 ratio and then a sharp drop in Ga relative concentration with LEISS reaching a Sb-dominated terminating 1-2 nm region corresponding to the implantation depth between 50 and 200 eV. XPS shows a slight enrichment of Ga in sub-surface layers that levels to a 1:1 stoichiometry of the crystalline GaSb(1 0 0) surface.

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