In Situ Power Loss Estimation of IGBT Power Modules

Qichen Jin, Johannes K. Mendizabal, Nenad Miljkovic, Arijit Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A fault detection and prediction method of insulated-gate bipolar transistor (IGBT) has been improved over the past decades to reduce system down time. In situ lifetime estimation of IGBT modules has been challenging due to a number of requirements: necessity to operate at high-voltage in the switching environment, measurement precision of the gate-threshold voltage or collector-to-emitter voltage. This paper presents a wear-fatigue estimation framework that consists of collector-to-emitter measurement, power loss calculation and thermal lifetime prediction model. The measurement circuit enables the estimation of power loss across a variety of IGBT modules with minimum impact on system reliability.

Original languageEnglish (US)
Title of host publication2021 IEEE International Electric Machines and Drives Conference, IEMDC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665405102
DOIs
StatePublished - May 17 2021
Event2021 IEEE International Electric Machines and Drives Conference, IEMDC 2021 - Hartford, United States
Duration: May 17 2021May 20 2021

Publication series

Name2021 IEEE International Electric Machines and Drives Conference, IEMDC 2021

Conference

Conference2021 IEEE International Electric Machines and Drives Conference, IEMDC 2021
Country/TerritoryUnited States
CityHartford
Period5/17/215/20/21

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Safety, Risk, Reliability and Quality

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