Abstract
The authors review the use of in situ optical absorption to probe point defect equilibria and kinetics in oxides, with particular attention to thin films and high-temperature measurements evaluating changes in oxygen content. The introduction notes the impact of point defects on oxide behavior, including differences in thin films versus bulk materials, and describes methods to evaluate point defect equilibria and kinetics; advantages of optical absorption among these methods are highlighted. Section 2 provides an overview of how optical absorption and point defect concentrations are related, including various possible structural and electronic origins of defect-mediated absorption changes corresponding to oxygen content changes. Section 3 traces the development of historical understanding of optical absorption in nonstoichiometric oxides and emergence of thin film applications and measurement approaches that resulted. Section 4 details the procedure for determining surface exchange coefficients from optical transmission relaxation measurements and provides specific examples of how this approach uniquely has enabled new insights into thin film surface exchange behavior with and without current collectors. Section 5 provides examples of optically derived diffusivity measurements and comparisons of bulk and thin film defect equilibria. Section 7 outlines potential opportunities and future developments in this area, and Section 7 concludes the manuscript.
Original language | English (US) |
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Article number | 1900496 |
Journal | Advanced Materials Interfaces |
Volume | 6 |
Issue number | 15 |
DOIs | |
State | Published - Aug 2019 |
Keywords
- diffusion
- high-temperature materials
- nonstoichiometry
- optical absorption
- point defects
- surface exchange kinetics
- thin films
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering