In situ measurements and transmission electron microscopy of carbon nanotube field-effect transistors

Taekyung Kim; Seongwon Kim; Eric Olson; Jian Min Zuo

doi:10.1016/j.ultramic.2007.10.007

In situ measurements and transmission electron microscopy of carbon nanotube field-effect transistors

Taekyung Kim, Seongwon Kim, Eric Olson, Jian Min Zuo

Research output: Contribution to journal › Article › peer-review

Abstract

We present the design and operation of a transmission electron microscopy (TEM)-compatible carbon nanotube (CNT) field-effect transistor (FET). The device is configured with microfabricated slits, which allows direct observation of CNTs in a FET using TEM and measurement of electrical transport while inside the TEM. As demonstrations of the device architecture, two examples are presented. The first example is an in situ electrical transport measurement of a bundle of carbon nanotubes. The second example is a study of electron beam radiation effect on CNT bundles using a 200 keV electron beam. In situ electrical transport measurement during the beam irradiation shows a signature of wall- or tube-breakdown. Stepwise current drops were observed when a high intensity electron beam was used to cut individual CNT bundles in a device with multiple bundles.

Original language	English (US)
Pages (from-to)	613-618
Number of pages	6
Journal	Ultramicroscopy
Volume	108
Issue number	7
DOIs	https://doi.org/10.1016/j.ultramic.2007.10.007
State	Published - Jun 2008

Keywords

Carbon nanotube bundle
Carbon nanotube field-effect transistor
In situ TEM

ASJC Scopus subject areas

General Materials Science
Instrumentation

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10.1016/j.ultramic.2007.10.007

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title = "In situ measurements and transmission electron microscopy of carbon nanotube field-effect transistors",

abstract = "We present the design and operation of a transmission electron microscopy (TEM)-compatible carbon nanotube (CNT) field-effect transistor (FET). The device is configured with microfabricated slits, which allows direct observation of CNTs in a FET using TEM and measurement of electrical transport while inside the TEM. As demonstrations of the device architecture, two examples are presented. The first example is an in situ electrical transport measurement of a bundle of carbon nanotubes. The second example is a study of electron beam radiation effect on CNT bundles using a 200 keV electron beam. In situ electrical transport measurement during the beam irradiation shows a signature of wall- or tube-breakdown. Stepwise current drops were observed when a high intensity electron beam was used to cut individual CNT bundles in a device with multiple bundles.",

keywords = "Carbon nanotube bundle, Carbon nanotube field-effect transistor, In situ TEM",

author = "Taekyung Kim and Seongwon Kim and Eric Olson and Zuo, {Jian Min}",

note = "Funding Information: This work was supported by US Department of Energy Grant DEFG02-01ER45923. Microscopy was carried out at the Center for Microanalysis of Materials at the Frederick Seitz Materials Research Laboratory, which is partially supported by the US Department of Energy under grant DEFG02-91-ER45439. We also thank Prof. Rogers and Dr. Kang Seong Jun for help with CNT growth.",

year = "2008",

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doi = "10.1016/j.ultramic.2007.10.007",

language = "English (US)",

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AU - Kim, Taekyung

AU - Kim, Seongwon

AU - Olson, Eric

AU - Zuo, Jian Min

N1 - Funding Information: This work was supported by US Department of Energy Grant DEFG02-01ER45923. Microscopy was carried out at the Center for Microanalysis of Materials at the Frederick Seitz Materials Research Laboratory, which is partially supported by the US Department of Energy under grant DEFG02-91-ER45439. We also thank Prof. Rogers and Dr. Kang Seong Jun for help with CNT growth.

PY - 2008/6

Y1 - 2008/6

N2 - We present the design and operation of a transmission electron microscopy (TEM)-compatible carbon nanotube (CNT) field-effect transistor (FET). The device is configured with microfabricated slits, which allows direct observation of CNTs in a FET using TEM and measurement of electrical transport while inside the TEM. As demonstrations of the device architecture, two examples are presented. The first example is an in situ electrical transport measurement of a bundle of carbon nanotubes. The second example is a study of electron beam radiation effect on CNT bundles using a 200 keV electron beam. In situ electrical transport measurement during the beam irradiation shows a signature of wall- or tube-breakdown. Stepwise current drops were observed when a high intensity electron beam was used to cut individual CNT bundles in a device with multiple bundles.

AB - We present the design and operation of a transmission electron microscopy (TEM)-compatible carbon nanotube (CNT) field-effect transistor (FET). The device is configured with microfabricated slits, which allows direct observation of CNTs in a FET using TEM and measurement of electrical transport while inside the TEM. As demonstrations of the device architecture, two examples are presented. The first example is an in situ electrical transport measurement of a bundle of carbon nanotubes. The second example is a study of electron beam radiation effect on CNT bundles using a 200 keV electron beam. In situ electrical transport measurement during the beam irradiation shows a signature of wall- or tube-breakdown. Stepwise current drops were observed when a high intensity electron beam was used to cut individual CNT bundles in a device with multiple bundles.

KW - Carbon nanotube bundle

KW - Carbon nanotube field-effect transistor

KW - In situ TEM

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In situ measurements and transmission electron microscopy of carbon nanotube field-effect transistors

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