In situ measurements and transmission electron microscopy of carbon nanotube field-effect transistors

Taekyung Kim, Seongwon Kim, Eric Olson, Jian Min Zuo

Research output: Contribution to journalArticlepeer-review

Abstract

We present the design and operation of a transmission electron microscopy (TEM)-compatible carbon nanotube (CNT) field-effect transistor (FET). The device is configured with microfabricated slits, which allows direct observation of CNTs in a FET using TEM and measurement of electrical transport while inside the TEM. As demonstrations of the device architecture, two examples are presented. The first example is an in situ electrical transport measurement of a bundle of carbon nanotubes. The second example is a study of electron beam radiation effect on CNT bundles using a 200 keV electron beam. In situ electrical transport measurement during the beam irradiation shows a signature of wall- or tube-breakdown. Stepwise current drops were observed when a high intensity electron beam was used to cut individual CNT bundles in a device with multiple bundles.

Original languageEnglish (US)
Pages (from-to)613-618
Number of pages6
JournalUltramicroscopy
Volume108
Issue number7
DOIs
StatePublished - Jun 2008

Keywords

  • Carbon nanotube bundle
  • Carbon nanotube field-effect transistor
  • In situ TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

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