In-situ high-temperature scanning-tunneling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001)

S. Kodambaka, V. Petrova, A. Vailionis, P. Desjardins, David G Cahill, I. Petrov, J. E. Greene

Research output: Contribution to journalArticlepeer-review

Abstract

In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flat TiN(001) terraces and in single-atom deep vacancy pits at temperatures of 750-950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs-Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23 ± 0.05 eV/Å and an activation energy for adatom formation and diffusion of 3.4 ± 0.3 eV.

Original languageEnglish (US)
Pages (from-to)589-593
Number of pages5
JournalSurface Review and Letters
Volume7
Issue number5-6
DOIs
StatePublished - Dec 1 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'In-situ high-temperature scanning-tunneling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001)'. Together they form a unique fingerprint.

Cite this