In-situ high-temperature scanning-tunneling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001)

S. Kodambaka; V. Petrova; A. Vailionis; P. Desjardins; David G Cahill; I. Petrov; J. E. Greene

doi:10.1016/S0218-625X(00)00081-6

In-situ high-temperature scanning-tunneling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001)

S. Kodambaka, V. Petrova, A. Vailionis, P. Desjardins, David G Cahill, I. Petrov, J. E. Greene

Research output: Contribution to journal › Article › peer-review

Abstract

In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flat TiN(001) terraces and in single-atom deep vacancy pits at temperatures of 750-950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs-Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23 ± 0.05 eV/Å and an activation energy for adatom formation and diffusion of 3.4 ± 0.3 eV.

Original language	English (US)
Pages (from-to)	589-593
Number of pages	5
Journal	Surface Review and Letters
Volume	7
Issue number	5-6
DOIs	https://doi.org/10.1016/S0218-625X(00)00081-6
State	Published - 2000

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0218-625X(00)00081-6

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title = "In-situ high-temperature scanning-tunneling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001)",

abstract = "In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flat TiN(001) terraces and in single-atom deep vacancy pits at temperatures of 750-950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs-Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23 ± 0.05 eV/{\AA} and an activation energy for adatom formation and diffusion of 3.4 ± 0.3 eV.",

author = "S. Kodambaka and V. Petrova and A. Vailionis and P. Desjardins and Cahill, {David G} and I. Petrov and Greene, {J. E.}",

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doi = "10.1016/S0218-625X(00)00081-6",

language = "English (US)",

volume = "7",

pages = "589--593",

journal = "Surface Review and Letters",

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TY - JOUR

T1 - In-situ high-temperature scanning-tunneling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001)

AU - Kodambaka, S.

AU - Petrova, V.

AU - Vailionis, A.

AU - Desjardins, P.

AU - Cahill, David G

AU - Petrov, I.

AU - Greene, J. E.

PY - 2000

Y1 - 2000

N2 - In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flat TiN(001) terraces and in single-atom deep vacancy pits at temperatures of 750-950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs-Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23 ± 0.05 eV/Å and an activation energy for adatom formation and diffusion of 3.4 ± 0.3 eV.

AB - In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flat TiN(001) terraces and in single-atom deep vacancy pits at temperatures of 750-950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs-Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23 ± 0.05 eV/Å and an activation energy for adatom formation and diffusion of 3.4 ± 0.3 eV.

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DO - 10.1016/S0218-625X(00)00081-6

M3 - Article

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SN - 0218-625X

VL - 7

SP - 589

EP - 593

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 5-6

ER -

In-situ high-temperature scanning-tunneling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001)

Abstract

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