In situ and ex situ characterization of (Ag, Cu)InSe 2 thin films

T. Begou, S. A. Little, A. Aquino, V. Ranjan, A. Rockett, R. W. Collins, S. Marsillac

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In situ and ex situ characterization methods have been used in order to investigate the growth as well as the physical and chemical properties of (Ag, Cu)InSe 2 (AgCIS) thin films deposited by direct current (dc) magnetron sputtering. Data acquired by real time spectroscopic ellipsometry (RTSE) were used to extract growth parameters such as thickness and surface roughness. A study of the growth parameters revealed that the layers demonstrated Volmer-Weber growth behavior. The complex dielectric functions, (ε 1 ε 2), of AgCIS at high and room temperatures as a function of x = Cu/(Ag+Cu) were also extracted from the RTSE data. The band gaps were extracted from the RTSE dielectric functions and compared with ex situ measurements.

Original languageEnglish (US)
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages326-328
Number of pages3
DOIs
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: Jun 19 2011Jun 24 2011

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/TerritoryUnited States
CitySeattle, WA
Period6/19/116/24/11

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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