TY - GEN
T1 - In situ and ex situ characterization of (Ag, Cu)InSe 2 thin films
AU - Begou, T.
AU - Little, S. A.
AU - Aquino, A.
AU - Ranjan, V.
AU - Rockett, A.
AU - Collins, R. W.
AU - Marsillac, S.
PY - 2011
Y1 - 2011
N2 - In situ and ex situ characterization methods have been used in order to investigate the growth as well as the physical and chemical properties of (Ag, Cu)InSe 2 (AgCIS) thin films deposited by direct current (dc) magnetron sputtering. Data acquired by real time spectroscopic ellipsometry (RTSE) were used to extract growth parameters such as thickness and surface roughness. A study of the growth parameters revealed that the layers demonstrated Volmer-Weber growth behavior. The complex dielectric functions, (ε 1 ε 2), of AgCIS at high and room temperatures as a function of x = Cu/(Ag+Cu) were also extracted from the RTSE data. The band gaps were extracted from the RTSE dielectric functions and compared with ex situ measurements.
AB - In situ and ex situ characterization methods have been used in order to investigate the growth as well as the physical and chemical properties of (Ag, Cu)InSe 2 (AgCIS) thin films deposited by direct current (dc) magnetron sputtering. Data acquired by real time spectroscopic ellipsometry (RTSE) were used to extract growth parameters such as thickness and surface roughness. A study of the growth parameters revealed that the layers demonstrated Volmer-Weber growth behavior. The complex dielectric functions, (ε 1 ε 2), of AgCIS at high and room temperatures as a function of x = Cu/(Ag+Cu) were also extracted from the RTSE data. The band gaps were extracted from the RTSE dielectric functions and compared with ex situ measurements.
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U2 - 10.1109/PVSC.2011.6185920
DO - 10.1109/PVSC.2011.6185920
M3 - Conference contribution
AN - SCOPUS:84861015797
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 326
EP - 328
BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Y2 - 19 June 2011 through 24 June 2011
ER -