In-plane control of morphology and tunable photoluminescence in porous silicon produced by metal-assisted electroless chemical etching

Keyphrases

• Luminescence 100%
• Porous Silicon 100%
• Tunable Photoluminescence 100%
• Electroless Chemical Etching 100%
• Fluorescence Microscopy 50%
• Crystallite Size 50%
• Scanning Electron Microscopy 25%
• Si(111) 25%
• Scattering Measurements 25%
• Line Shape 25%
• Spatially Resolved 25%
• Phonons 25%
• Nanocrystalline 25%
• Raman Scattering 25%
• Emission Spectrum 25%
• Valence Band 25%
• Processing Parameters 25%
• Hydrogen Peroxide 25%
• Methanol 25%
• Longitudinal Optical Phonons 25%
• Distance Function 25%
• Scanning Electron Microscope Image 25%
• Etching Mechanism 25%
• Peak Emissions 25%
• H2O2 Reduction 25%
• NM600 25%
• Phonon Confinement 25%
• Photoluminescent 25%
• Electroless Etching 25%
• Shape Studies 25%
• Spatial Proximity 25%
• True Color 25%
• Phonon Band 25%

Engineering

• Porous Silicon 100%
• Control Plane 100%
• Crystallite Size 66%
• Line Shape 33%
• Emission Wavelength 33%
• Nanocrystalline 33%
• Optical Phonon 33%
• Broadening 33%
• Valence Band 33%
• Critical Role 33%
• Processing Variable 33%
• Phonon Confinement 33%

Material Science

• Photoluminescence 100%
• Luminescence 100%
• Porous Silicon 100%
• Scanning Electron Microscopy 50%
• Fluorescence Microscopy 50%
• Crystallite Size 50%
• Lineshape 25%
• Nanocrystalline 25%