In-plane bandgap control in porous GaN through electroless wet chemical etching

Keyphrases

• Cathodoluminescence 100%
• Chemical Etching 100%
• Electroless 100%
• Band Gap Control 100%
• Porous GaN 100%
• High Energy 50%
• Hydrogen Peroxide 50%
• Blue Shift 50%
• Light Emission 50%
• Quantum Confinement Effect 50%
• Hole Transport 50%
• Cathodoluminescence Spectroscopy 50%
• Metal-assisted Chemical Etching 50%
• Time Parameter 50%
• Band Gap Energy 50%
• Small Feature Size 50%
• Two-band 50%
• Emission Properties 50%
• SiC Substrate 50%
• Solution Parameters 50%
• Band-gap Emission 50%
• Nanoporous GaN 50%

Material Science

• Wet Etching 100%
• Cathodoluminescence 100%
• Crystalline Material 33%