In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy

Daniel A. Chenet, O. Burak Aslan, Pinshane Y. Huang, Chris Fan, Arend M. Van Der Zande, Tony F. Heinz, James C. Hone

Research output: Contribution to journalArticle

Abstract

Rhenium disulfide (ReS2) is a semiconducting layered transition metal dichalcogenide that exhibits a stable distorted 1T phase. The reduced symmetry of this system leads to in-plane anisotropy in various material properties. Here, we demonstrate the strong anisotropy in the Raman scattering response for linearly polarized excitation. Polarized Raman scattering is shown to permit a determination of the crystallographic orientation of ReS2 through comparison with direct structural analysis by scanning transmission electron microscopy (STEM). Analysis of the frequency difference of appropriate Raman modes is also shown to provide a means of precisely determining layer thickness up to four layers.

Original languageEnglish (US)
Pages (from-to)5667-5672
Number of pages6
JournalNano letters
Volume15
Issue number9
DOIs
StatePublished - Sep 9 2015

Fingerprint

Raman spectroscopy
Raman scattering
Anisotropy
Raman spectra
Rhenium
Transmission electron microscopy
transmission electron microscopy
Scanning electron microscopy
anisotropy
scanning electron microscopy
rhenium
disulfides
structural analysis
Structural analysis
Disulfides
Transition metals
Materials properties
transition metals
symmetry
excitation

Keywords

  • 2-D material
  • ReS
  • Rhenium disulfide
  • STEM
  • anisotropic
  • polarized Raman spectroscopy
  • transition metal dichalcogenide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy. / Chenet, Daniel A.; Aslan, O. Burak; Huang, Pinshane Y.; Fan, Chris; Van Der Zande, Arend M.; Heinz, Tony F.; Hone, James C.

In: Nano letters, Vol. 15, No. 9, 09.09.2015, p. 5667-5672.

Research output: Contribution to journalArticle

Chenet, Daniel A. ; Aslan, O. Burak ; Huang, Pinshane Y. ; Fan, Chris ; Van Der Zande, Arend M. ; Heinz, Tony F. ; Hone, James C. / In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy. In: Nano letters. 2015 ; Vol. 15, No. 9. pp. 5667-5672.
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AU - Van Der Zande, Arend M.

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AU - Hone, James C.

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AB - Rhenium disulfide (ReS2) is a semiconducting layered transition metal dichalcogenide that exhibits a stable distorted 1T phase. The reduced symmetry of this system leads to in-plane anisotropy in various material properties. Here, we demonstrate the strong anisotropy in the Raman scattering response for linearly polarized excitation. Polarized Raman scattering is shown to permit a determination of the crystallographic orientation of ReS2 through comparison with direct structural analysis by scanning transmission electron microscopy (STEM). Analysis of the frequency difference of appropriate Raman modes is also shown to provide a means of precisely determining layer thickness up to four layers.

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