Impurity induced layer disordering of Si implanted AlxGa 1-xAs-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops

L. J. Guido, K. C. Hsieh, N. Holonyak, R. W. Kaliski, V. Eu, M. Feng, R. D. Burnham

Research output: Contribution to journal › Article › peer-review

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Physics & Astronomy