Impurity induced layer disordering of Si implanted AlxGa 1-xAs-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops

L. J. Guido, K. C. Hsieh, N. Holonyak, R. W. Kaliski, V. Eu, M. Feng, R. D. Burnham

Research output: Contribution to journalArticlepeer-review

Abstract

Extensive data are presented on impurity-induced layer disordering (IILD) of AlxGa1-xAs-GaAs quantum-well heterostructures and superlattices that are Si implanted and annealed (Si+-IILD) at three different implant doses. We show that impurity activation is not critical to the layer disordering process and that Si diffusion from the implanted profile initiates Si+-IILD. When the implant dose is as high as φ≥5×1013/cm2 (nSi ≥2×1018/cm3), Si interstitial loops (Si-ILs) form by diffusion and agglomeration of the implanted Si atoms during the initial stages of annealing. If a source of Ga vacancies is provided (e.g., via an As overpressure or SiO2 encapsulation), the Si-ILs dissociate and supply Si atoms for diffusion and hence Si+-IILD during the latter stages of annealing. If a Si3N4 encapsulant is employed, however, fewer Si-ILs form and Si diffusion is inhibited. For an implantation dose as low as φ=1×1012/cm 2 (nSi =3×1016/cm 3), extensive Si+-IILD is realized via capless annealing and Si-ILs are not observed. It is significant for device applications that the layer-disordered material operates as a cw 77 K photopumped laser, which indicates that the layer averaging (IILD) does not damage the crystal.

Original languageEnglish (US)
Pages (from-to)1329-1334
Number of pages6
JournalJournal of Applied Physics
Volume61
Issue number4
DOIs
StatePublished - Dec 1 1987
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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