Impurity-induced layer disordering in In0.5(Alx Ga1-x)0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers

J. M. Dallesasse, W. E. Plano, D. W. Nam, K. C. Hsieh, J. E. Baker, N. Holonyak, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. G. Craford

Research output: Contribution to journalArticle

Abstract

Diffusion of Si into quantum-well heterostructures and superlattices employing the high gap III-V quaternary system Iny (Al xGa1-x) 1-yP is shown to result in impurity-induced layer disordering. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence data indicate that the diffusion of Si into an InAlP-InGaP superlattice grown lattice matched on GaAs (y≊0.5) results in the intermixing of the layers, thus forming an alloy of average composition. Buried-heterostructure lasers are fabricated using Si layer disordering of In0.5 (Alx Ga1-x) 0.5 P p-n quantum-well heterostructures. The disorder-defined stripe-geometry diode lasers operate pulsed at 300 K near 6400 Å. Continuous wave operation at λ∼6255 Å is achieved at -47°C.

Original languageEnglish (US)
Pages (from-to)482-487
Number of pages6
JournalJournal of Applied Physics
Volume66
Issue number2
DOIs
StatePublished - Dec 1 1989

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Dallesasse, J. M., Plano, W. E., Nam, D. W., Hsieh, K. C., Baker, J. E., Holonyak, N., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., & Craford, M. G. (1989). Impurity-induced layer disordering in In0.5(Alx Ga1-x)0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers. Journal of Applied Physics, 66(2), 482-487. https://doi.org/10.1063/1.343562