Impurity-induced layer disordering in In0.5(Alx Ga1-x)0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers

J. M. Dallesasse; W. E. Plano; D. W. Nam; K. C. Hsieh; J. E. Baker; N. Holonyak; C. P. Kuo; R. M. Fletcher; T. D. Osentowski; M. G. Craford

doi:10.1063/1.343562

Impurity-induced layer disordering in In_0.5(Al_x Ga_1-x)_0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers

J. M. Dallesasse, W. E. Plano, D. W. Nam, K. C. Hsieh, J. E. Baker, N. Holonyak, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. G. Craford

Research output: Contribution to journal › Article › peer-review

Abstract

Diffusion of Si into quantum-well heterostructures and superlattices employing the high gap III-V quaternary system In_y (Al _xGa_1-x) _1-yP is shown to result in impurity-induced layer disordering. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence data indicate that the diffusion of Si into an InAlP-InGaP superlattice grown lattice matched on GaAs (y≊0.5) results in the intermixing of the layers, thus forming an alloy of average composition. Buried-heterostructure lasers are fabricated using Si layer disordering of In_0.5 (Al_x Ga_1-x) _0.5 P p-n quantum-well heterostructures. The disorder-defined stripe-geometry diode lasers operate pulsed at 300 K near 6400 Å. Continuous wave operation at λ∼6255 Å is achieved at -47°C.

Original language	English (US)
Pages (from-to)	482-487
Number of pages	6
Journal	Journal of Applied Physics
Volume	66
Issue number	2
DOIs	https://doi.org/10.1063/1.343562
State	Published - 1989

ASJC Scopus subject areas

General Physics and Astronomy

Online availability

10.1063/1.343562

Library availability

Discover UIUC Full Text

Cite this

Dallesasse, J. M., Plano, W. E., Nam, D. W., Hsieh, K. C., Baker, J. E., Holonyak, N., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., & Craford, M. G. (1989). Impurity-induced layer disordering in In_0.5(Al_x Ga_1-x)_0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers. Journal of Applied Physics, 66(2), 482-487. https://doi.org/10.1063/1.343562

@article{b22110b344fe46088dc9b154f46ba123,

title = "Impurity-induced layer disordering in In0.5(Alx Ga1-x)0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers",

abstract = "Diffusion of Si into quantum-well heterostructures and superlattices employing the high gap III-V quaternary system Iny (Al xGa1-x) 1-yP is shown to result in impurity-induced layer disordering. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence data indicate that the diffusion of Si into an InAlP-InGaP superlattice grown lattice matched on GaAs (y≊0.5) results in the intermixing of the layers, thus forming an alloy of average composition. Buried-heterostructure lasers are fabricated using Si layer disordering of In0.5 (Alx Ga1-x) 0.5 P p-n quantum-well heterostructures. The disorder-defined stripe-geometry diode lasers operate pulsed at 300 K near 6400 {\AA}. Continuous wave operation at λ∼6255 {\AA} is achieved at -47°C.",

author = "Dallesasse, {J. M.} and Plano, {W. E.} and Nam, {D. W.} and Hsieh, {K. C.} and Baker, {J. E.} and N. Holonyak and Kuo, {C. P.} and Fletcher, {R. M.} and Osentowski, {T. D.} and Craford, {M. G.}",

year = "1989",

doi = "10.1063/1.343562",

language = "English (US)",

volume = "66",

pages = "482--487",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Impurity-induced layer disordering in In0.5(Alx Ga1-x)0.5P-InGaP quantum-well heterostructures

T2 - Visible-spectrum-buried heterostructure lasers

AU - Dallesasse, J. M.

AU - Plano, W. E.

AU - Nam, D. W.

AU - Hsieh, K. C.

AU - Baker, J. E.

AU - Holonyak, N.

AU - Kuo, C. P.

AU - Fletcher, R. M.

AU - Osentowski, T. D.

AU - Craford, M. G.

PY - 1989

Y1 - 1989

N2 - Diffusion of Si into quantum-well heterostructures and superlattices employing the high gap III-V quaternary system Iny (Al xGa1-x) 1-yP is shown to result in impurity-induced layer disordering. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence data indicate that the diffusion of Si into an InAlP-InGaP superlattice grown lattice matched on GaAs (y≊0.5) results in the intermixing of the layers, thus forming an alloy of average composition. Buried-heterostructure lasers are fabricated using Si layer disordering of In0.5 (Alx Ga1-x) 0.5 P p-n quantum-well heterostructures. The disorder-defined stripe-geometry diode lasers operate pulsed at 300 K near 6400 Å. Continuous wave operation at λ∼6255 Å is achieved at -47°C.

AB - Diffusion of Si into quantum-well heterostructures and superlattices employing the high gap III-V quaternary system Iny (Al xGa1-x) 1-yP is shown to result in impurity-induced layer disordering. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence data indicate that the diffusion of Si into an InAlP-InGaP superlattice grown lattice matched on GaAs (y≊0.5) results in the intermixing of the layers, thus forming an alloy of average composition. Buried-heterostructure lasers are fabricated using Si layer disordering of In0.5 (Alx Ga1-x) 0.5 P p-n quantum-well heterostructures. The disorder-defined stripe-geometry diode lasers operate pulsed at 300 K near 6400 Å. Continuous wave operation at λ∼6255 Å is achieved at -47°C.

UR - http://www.scopus.com/inward/record.url?scp=36549096884&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549096884&partnerID=8YFLogxK

U2 - 10.1063/1.343562

DO - 10.1063/1.343562

M3 - Article

AN - SCOPUS:36549096884

SN - 0021-8979

VL - 66

SP - 482

EP - 487

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -