Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation

R. P. Bryan; J. J. Coleman; L. M. Miller; M. E. Givens; R. S. Averback; J. L. Klatt

doi:10.1063/1.102098

Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation

R. P. Bryan, J. J. Coleman, L. M. Miller, M. E. Givens, R. S. Averback, J. L. Klatt

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Abstract

Data are presented on stripe geometry AlGaAs-GaAs graded barrier quantum well heterostructure lasers formed by MeV oxygen implantation and annealing. Low-dose implants are found to suppress lateral carrier diffusion but do not result in compositional disordering. High-dose implants form both a semi-insulating and a compositionally disordered region leading to index-guided buried-heterostructure laser operation. However, the concentration of oxygen which spreads laterally under the implantation mask during high-dose implants is sufficient to partially compensate the stripe region for narrow stripe widths and thereby significantly increases the threshold current.

Original language	English (US)
Pages (from-to)	94-96
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	2
DOIs	https://doi.org/10.1063/1.102098
State	Published - 1989

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Physics and Astronomy (miscellaneous)

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10.1063/1.102098

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title = "Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation",

abstract = "Data are presented on stripe geometry AlGaAs-GaAs graded barrier quantum well heterostructure lasers formed by MeV oxygen implantation and annealing. Low-dose implants are found to suppress lateral carrier diffusion but do not result in compositional disordering. High-dose implants form both a semi-insulating and a compositionally disordered region leading to index-guided buried-heterostructure laser operation. However, the concentration of oxygen which spreads laterally under the implantation mask during high-dose implants is sufficient to partially compensate the stripe region for narrow stripe widths and thereby significantly increases the threshold current.",

author = "Bryan, {R. P.} and Coleman, {J. J.} and Miller, {L. M.} and Givens, {M. E.} and Averback, {R. S.} and Klatt, {J. L.}",

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AU - Bryan, R. P.

AU - Coleman, J. J.

AU - Miller, L. M.

AU - Givens, M. E.

AU - Averback, R. S.

AU - Klatt, J. L.

PY - 1989

Y1 - 1989

N2 - Data are presented on stripe geometry AlGaAs-GaAs graded barrier quantum well heterostructure lasers formed by MeV oxygen implantation and annealing. Low-dose implants are found to suppress lateral carrier diffusion but do not result in compositional disordering. High-dose implants form both a semi-insulating and a compositionally disordered region leading to index-guided buried-heterostructure laser operation. However, the concentration of oxygen which spreads laterally under the implantation mask during high-dose implants is sufficient to partially compensate the stripe region for narrow stripe widths and thereby significantly increases the threshold current.

AB - Data are presented on stripe geometry AlGaAs-GaAs graded barrier quantum well heterostructure lasers formed by MeV oxygen implantation and annealing. Low-dose implants are found to suppress lateral carrier diffusion but do not result in compositional disordering. High-dose implants form both a semi-insulating and a compositionally disordered region leading to index-guided buried-heterostructure laser operation. However, the concentration of oxygen which spreads laterally under the implantation mask during high-dose implants is sufficient to partially compensate the stripe region for narrow stripe widths and thereby significantly increases the threshold current.

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Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation

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