Keyphrases
Gallium Arsenide
100%
Impurity Diffusion
100%
Interdiffusion
100%
GaAs Heterostructures
100%
Impurity Layers
100%
Superlattices
71%
Enhanced Solubility
28%
Enhancement Layer
28%
Secondary Ion Mass Spectrometry
14%
Metal-organic Chemical Vapor Deposition (MOCVD)
14%
Transmission Electron Microscopy
14%
Diffusion Process
14%
P-type
14%
Impurities
14%
Epitaxial
14%
Undoped
14%
Dopant Sources
14%
Fermi Level
14%
Background Impurity
14%
Si Diffusion
14%
Si-doped
14%
AlxGa1-xN
14%
Annealing Conditions
14%
In Dopant
14%
Si Layer
14%
Mass Transmission
14%
Crystal Stoichiometry
14%
Native Defects
14%
Engineering
Gallium Arsenide
100%
Interdiffusion
100%
Gaas Heterostructures
100%
Chemical Vapor Deposition
16%
Vapor Deposition
16%
Defects
16%
Data Show
16%
Transmissions
16%
Dopants
16%
Doped Gaas
16%
Diffusion Process
16%
Fermi Level
16%
Native Defect
16%
Material Science
Gallium Arsenide
100%
Heterojunction
100%
Superlattice
62%
Secondary Ion Mass Spectrometry
12%
Annealing
12%
Chemical Vapor Deposition
12%
Transmission Electron Microscopy
12%
Doping (Additives)
12%
Chemical Engineering
Metallorganic Chemical Vapor Deposition
100%