IMPURITY DEPENDENCE OF DISTRIBUTION COEFFICIENTS IN THE LPE GROWTH OF InGaAsP.

M. Feng, M. M. Tashima, L. W. Cook, G. E. Stillman

Research output: Contribution to journalConference article

Abstract

In the growth of InGaAsP epitaxial layers on (100) InP substrates, doping the growth solutions with Zn, Sn or Te causes changes in the lattice constants and energy gaps of the epitaxial layer. These changes are due to the variation of the Ga and As distribution coefficients with impurity content of the growth solution. For the growth of accurately lattice-matched quaternary homojunctions it is essential that this variation be taken into account in determining the growth solution compositions. Refs.

Original languageEnglish (US)
Pages (from-to)61-70
Number of pages10
JournalInstitute of Physics Conference Series
Issue number45
StatePublished - Jan 1 1979
Externally publishedYes
EventProc of the Int Symp on Gallium Arsenide and Relat Compd, 7th - St Louis, MO, USA
Duration: Sep 24 1978Sep 27 1978

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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