IMPURITY DEPENDENCE OF DISTRIBUTION COEFFICIENTS IN THE LPE GROWTH OF InGaAsP.

Milton Feng, M. M. Tashima, L. W. Cook, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

In the growth of InGaAsP epitaxial layers on (100) InP substrates, doping the growth solutions with Zn, Sn or Te causes changes in the lattice constants and energy gaps of the epitaxial layer. These changes are due to the variation of the Ga and As distribution coefficients with impurity content of the growth solution. For the growth of accurately lattice-matched quaternary homojunctions it is essential that this variation be taken into account in determining the growth solution compositions. Refs.

Original languageEnglish (US)
Pages (from-to)61-70
Number of pages10
JournalInstitute of Physics Conference Series
Issue number45
StatePublished - 1979
Externally publishedYes

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impurities
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IMPURITY DEPENDENCE OF DISTRIBUTION COEFFICIENTS IN THE LPE GROWTH OF InGaAsP. / Feng, Milton; Tashima, M. M.; Cook, L. W.; Stillman, G. E.

In: Institute of Physics Conference Series, No. 45, 1979, p. 61-70.

Research output: Contribution to journalArticle

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