Abstract
In the growth of InGaAsP epitaxial layers on (100) InP substrates, doping the growth solutions with Zn, Sn or Te causes changes in the lattice constants and energy gaps of the epitaxial layer. These changes are due to the variation of the Ga and As distribution coefficients with impurity content of the growth solution. For the growth of accurately lattice-matched quaternary homojunctions it is essential that this variation be taken into account in determining the growth solution compositions. Refs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 61-70 |
| Number of pages | 10 |
| Journal | Institute of Physics Conference Series |
| Issue number | 45 |
| State | Published - 1979 |
| Externally published | Yes |
| Event | Proc of the Int Symp on Gallium Arsenide and Relat Compd, 7th - St Louis, MO, USA Duration: Sep 24 1978 → Sep 27 1978 |
ASJC Scopus subject areas
- General Physics and Astronomy