@inproceedings{49a0365ac770426c9ded9174f012c666,
title = "Improving the long pulse width failure current of NPN in BiCMOS technology",
abstract = "The pulse width dependency of the failure current for NPN structures in a 0.18-μm BiCMOS technology is studied using measurements and TCAD simulation. The desired 'Wunsch-Bell' behavior is not observed due to formation of current filaments in this device; however, the failure current for long pulse widths can be increased by layout changes.",
keywords = "BiCMOS NPN, ESD, long pulse width failure",
author = "Yang Xiu and Aravind Appaswamy and Zaichen Chen and Akram Salman and Mariano Dissegna and Gianluca Boselli and Elyse Rosenbaum",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 International Reliability Physics Symposium, IRPS 2016 ; Conference date: 17-04-2016 Through 21-04-2016",
year = "2016",
month = sep,
day = "22",
doi = "10.1109/IRPS.2016.7574606",
language = "English (US)",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "EL51--EL54",
booktitle = "2016 International Reliability Physics Symposium, IRPS 2016",
address = "United States",
}