Improving the long pulse width failure current of NPN in BiCMOS technology

Yang Xiu, Aravind Appaswamy, Zaichen Chen, Akram Salman, Mariano Dissegna, Gianluca Boselli, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The pulse width dependency of the failure current for NPN structures in a 0.18-μm BiCMOS technology is studied using measurements and TCAD simulation. The desired 'Wunsch-Bell' behavior is not observed due to formation of current filaments in this device; however, the failure current for long pulse widths can be increased by layout changes.

Original languageEnglish (US)
Title of host publication2016 International Reliability Physics Symposium, IRPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesEL51-EL54
ISBN (Electronic)9781467391368
DOIs
StatePublished - Sep 22 2016
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: Apr 17 2016Apr 21 2016

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2016-September
ISSN (Print)1541-7026

Other

Other2016 International Reliability Physics Symposium, IRPS 2016
CountryUnited States
CityPasadena
Period4/17/164/21/16

Fingerprint

BiCMOS technology

Keywords

  • BiCMOS NPN
  • ESD
  • long pulse width failure

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Xiu, Y., Appaswamy, A., Chen, Z., Salman, A., Dissegna, M., Boselli, G., & Rosenbaum, E. (2016). Improving the long pulse width failure current of NPN in BiCMOS technology. In 2016 International Reliability Physics Symposium, IRPS 2016 (pp. EL51-EL54). [7574606] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2016.7574606

Improving the long pulse width failure current of NPN in BiCMOS technology. / Xiu, Yang; Appaswamy, Aravind; Chen, Zaichen; Salman, Akram; Dissegna, Mariano; Boselli, Gianluca; Rosenbaum, Elyse.

2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. EL51-EL54 7574606 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xiu, Y, Appaswamy, A, Chen, Z, Salman, A, Dissegna, M, Boselli, G & Rosenbaum, E 2016, Improving the long pulse width failure current of NPN in BiCMOS technology. in 2016 International Reliability Physics Symposium, IRPS 2016., 7574606, IEEE International Reliability Physics Symposium Proceedings, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. EL51-EL54, 2016 International Reliability Physics Symposium, IRPS 2016, Pasadena, United States, 4/17/16. https://doi.org/10.1109/IRPS.2016.7574606
Xiu Y, Appaswamy A, Chen Z, Salman A, Dissegna M, Boselli G et al. Improving the long pulse width failure current of NPN in BiCMOS technology. In 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. EL51-EL54. 7574606. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2016.7574606
Xiu, Yang ; Appaswamy, Aravind ; Chen, Zaichen ; Salman, Akram ; Dissegna, Mariano ; Boselli, Gianluca ; Rosenbaum, Elyse. / Improving the long pulse width failure current of NPN in BiCMOS technology. 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. EL51-EL54 (IEEE International Reliability Physics Symposium Proceedings).
@inproceedings{49a0365ac770426c9ded9174f012c666,
title = "Improving the long pulse width failure current of NPN in BiCMOS technology",
abstract = "The pulse width dependency of the failure current for NPN structures in a 0.18-μm BiCMOS technology is studied using measurements and TCAD simulation. The desired 'Wunsch-Bell' behavior is not observed due to formation of current filaments in this device; however, the failure current for long pulse widths can be increased by layout changes.",
keywords = "BiCMOS NPN, ESD, long pulse width failure",
author = "Yang Xiu and Aravind Appaswamy and Zaichen Chen and Akram Salman and Mariano Dissegna and Gianluca Boselli and Elyse Rosenbaum",
year = "2016",
month = "9",
day = "22",
doi = "10.1109/IRPS.2016.7574606",
language = "English (US)",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "EL51--EL54",
booktitle = "2016 International Reliability Physics Symposium, IRPS 2016",
address = "United States",

}

TY - GEN

T1 - Improving the long pulse width failure current of NPN in BiCMOS technology

AU - Xiu, Yang

AU - Appaswamy, Aravind

AU - Chen, Zaichen

AU - Salman, Akram

AU - Dissegna, Mariano

AU - Boselli, Gianluca

AU - Rosenbaum, Elyse

PY - 2016/9/22

Y1 - 2016/9/22

N2 - The pulse width dependency of the failure current for NPN structures in a 0.18-μm BiCMOS technology is studied using measurements and TCAD simulation. The desired 'Wunsch-Bell' behavior is not observed due to formation of current filaments in this device; however, the failure current for long pulse widths can be increased by layout changes.

AB - The pulse width dependency of the failure current for NPN structures in a 0.18-μm BiCMOS technology is studied using measurements and TCAD simulation. The desired 'Wunsch-Bell' behavior is not observed due to formation of current filaments in this device; however, the failure current for long pulse widths can be increased by layout changes.

KW - BiCMOS NPN

KW - ESD

KW - long pulse width failure

UR - http://www.scopus.com/inward/record.url?scp=84990890443&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84990890443&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2016.7574606

DO - 10.1109/IRPS.2016.7574606

M3 - Conference contribution

AN - SCOPUS:84990890443

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - EL51-EL54

BT - 2016 International Reliability Physics Symposium, IRPS 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -