Improving the long pulse width failure current of NPN in BiCMOS technology

Yang Xiu, Aravind Appaswamy, Zaichen Chen, Akram Salman, Mariano Dissegna, Gianluca Boselli, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The pulse width dependency of the failure current for NPN structures in a 0.18-μm BiCMOS technology is studied using measurements and TCAD simulation. The desired 'Wunsch-Bell' behavior is not observed due to formation of current filaments in this device; however, the failure current for long pulse widths can be increased by layout changes.

Original languageEnglish (US)
Title of host publication2016 International Reliability Physics Symposium, IRPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesEL51-EL54
ISBN (Electronic)9781467391368
DOIs
StatePublished - Sep 22 2016
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: Apr 17 2016Apr 21 2016

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2016-September
ISSN (Print)1541-7026

Other

Other2016 International Reliability Physics Symposium, IRPS 2016
CountryUnited States
CityPasadena
Period4/17/164/21/16

Keywords

  • BiCMOS NPN
  • ESD
  • long pulse width failure

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Xiu, Y., Appaswamy, A., Chen, Z., Salman, A., Dissegna, M., Boselli, G., & Rosenbaum, E. (2016). Improving the long pulse width failure current of NPN in BiCMOS technology. In 2016 International Reliability Physics Symposium, IRPS 2016 (pp. EL51-EL54). [7574606] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2016.7574606