Improving Current ON/OFF Ratio and Subthreshold Swing of Schottky- Gate AlGaN/GaN HEMTs by Postmetallization Annealing

Keyphrases

• AlGaN-GaN 100%
• GaN HEMT 100%
• Subthreshold Swing 100%
• Schottky Gate 100%
• Post-metallization Annealing 100%
• Aluminum Oxide 80%
• Drain Current 40%
• Gate Leakage Current 40%
• Aluminum Gallium Nitride (AlGaN) 40%
• Order of Magnitude 20%
• Three-order 20%
• Capacitors 20%
• Passivated 20%
• High Electron Mobility Transistor 20%
• Gate Structure 20%
• Leakage Current 20%
• Gate Capacitance 20%
• Trap-assisted Tunneling 20%
• Off-state 20%
• Trap States 20%
• Interface Traps 20%
• Capacitance-voltage Measurements 20%
• Metal-insulator-semiconductor 20%
• Gate Leakage 20%
• State Energy 20%
• Current-voltage Measurements 20%
• Temperature-dependent Current-voltage 20%
• Fowler-Nordheim Tunneling 20%
• Reverse-biased 20%
• High Drain Current 20%
• Improving Mechanism 20%
• Low Subthreshold Swing 20%
• Leakage Conduction 20%

Material Science

• Transistor 100%
• Al2O3 100%
• Electron Mobility 100%
• Capacitor 25%
• Capacitance 25%