Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems

Keyphrases

• Annealing 100%
• Deuterium 100%
• Metal-dielectric 100%
• Hot Carrier Reliability 100%
• Anneal Process 33%
• Channel Hot Carrier 33%
• High Performance 16%
• Process Optimization 16%
• Wafer 16%
• Isotope Effect 16%
• Dielectric 16%
• Integrated Circuits 16%
• Deuterium Isotope Effect 16%
• Passivation Effect 16%
• Carrier Lifetime 16%
• Varying Temperature 16%
• Transistor Channel 16%
• Process Integration 16%
• Optimization Study 16%
• CMOS Integrated Circuits 16%
• One-level 16%
• CMOS Structures 16%

Engineering

• Dielectrics 100%
• Carrier Lifetime 33%
• Passivation 33%
• Experimental Finding 33%
• CMOS Integrated Circuits 33%
• Temperature Time 33%
• Channel Transistor 33%
• Process Integration 33%
• Cap Wafer 33%
• Integrated Circuit 33%