@inproceedings{f2e31c34c4c44b18bf6ffd85bda7d957,
title = "Improvement in enhanced spontaneous emission of resonant cavity light emitting transistors via inductively coupled plasma etching top distributed bragg reflector",
abstract = "We report the improvement of light emission from resonant cavity light emitting transistor (RCLET) around 68% via Inductively Coupled Plasma (ICP) etching top distributed Bragg reflector (DBR). Due to the lateral feeding characteristics of RCLET, the radiative recombination takes place along the peripheral of the emitter. The smoothly etched sidewall achieved by ICP reduces the light scattering. Hence, the cavity quality factor (Q) increases. The enhanced recombination can be observed from reduced electrical gain in the family curve, an evidence of carrier lifetime reduction. The 10x3 μm 2 device shows the high optical bandwidth of 4GHz.",
keywords = "Distributed bragg reflector, Light emitting transistor, Resonant cavity",
author = "Wu, {Mong Kai} and Michael Liu and Milton Feng",
year = "2013",
month = nov,
day = "15",
language = "English (US)",
isbn = "1893580210",
series = "2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013",
pages = "279--282",
booktitle = "2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013",
note = "28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 ; Conference date: 13-05-2013 Through 16-05-2013",
}