Improved wafer-level VFTLP system and investigation of device turn-on effects

Junjun Li, Sami Hyvonen, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present an improved wafer-level VFTLP measurement system. This system produces pulses with sub-150ps rise time and few distortions at the rising edge. By introducing a broadband power divider, the oscilloscope no longer limits the pulse amplitude, and arbitrarily high pulse voltages can be measured. Turn-on effects in diodes and NMOSFETs are investigated using this system.

Original languageEnglish (US)
Title of host publication2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
DOIs
StatePublished - Dec 1 2004
Event2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04 - Grapevine, TX, United States
Duration: Sep 19 2004Sep 23 2004

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Other

Other2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
CountryUnited States
CityGrapevine, TX
Period9/19/049/23/04

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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