TY - GEN
T1 - Improved wafer-level VFTLP system and investigation of device turn-on effects
AU - Li, Junjun
AU - Hyvonen, Sami
AU - Rosenbaum, Elyse
PY - 2004
Y1 - 2004
N2 - We present an improved wafer-level VFTLP measurement system. This system produces pulses with sub-150ps rise time and few distortions at the rising edge. By introducing a broadband power divider, the oscilloscope no longer limits the pulse amplitude, and arbitrarily high pulse voltages can be measured. Turn-on effects in diodes and NMOSFETs are investigated using this system.
AB - We present an improved wafer-level VFTLP measurement system. This system produces pulses with sub-150ps rise time and few distortions at the rising edge. By introducing a broadband power divider, the oscilloscope no longer limits the pulse amplitude, and arbitrarily high pulse voltages can be measured. Turn-on effects in diodes and NMOSFETs are investigated using this system.
UR - http://www.scopus.com/inward/record.url?scp=77950838428&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77950838428&partnerID=8YFLogxK
U2 - 10.1109/EOSESD.2004.5272590
DO - 10.1109/EOSESD.2004.5272590
M3 - Conference contribution
AN - SCOPUS:77950838428
SN - 1585370630
SN - 9781585370634
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
BT - 2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
T2 - 2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
Y2 - 19 September 2004 through 23 September 2004
ER -