Improved transparent conductive oxide/p+/i junction in amorphous silicon solar cells by tailored hydrogen flux during growth

A. Nuruddin, John R Abelson

Research output: Contribution to journalArticlepeer-review

Abstract

We use the contact potential (Kelvin probe) method to evaluate the electrostatic potential profile across the transparent conductive oxide/p/i junction in hydrogenated amorphous silicon photovoltaic cells. Si films are deposited using reactive magnetron sputter deposition; the atomic H flux to the growth surface is controlled by changing the rate of H2 injection. H tailoring can be used to minimize the chemical reduction of SnO2, to optimize the contact potential with ZnO, to maximize the doping efficiency of the p+-layer, and to minimize the defect density at the p+/i interface. These methods should improve the built-in potential and thus raise the output voltage of amorphous silicon photovoltaic cells.

Original languageEnglish (US)
Pages (from-to)49-63
Number of pages15
JournalThin Solid Films
Volume394
Issue number1-2
StatePublished - Aug 15 2001

Keywords

  • Amorphous materials
  • Deposition process
  • Hydrogen
  • Interfaces
  • Silicon
  • Solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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