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Improved Si3N4/Si/GaAs metal-insulator-semiconductor interfaces by in situ anneal of the as-deposited Si
Meng Tao, Andrei E. Botchkarev, Daegyu Park, John Reed, S. Jay Chey, Joseph E. Van Nostrand, David G. Cahill, Hadis Morkoç
Research output: Contribution to journal › Article › peer-review