Improved Si₃N₄/Si/GaAs metal-insulator-semiconductor interfaces by in situ anneal of the as-deposited Si

Keyphrases

• Annealing 100%
• In Situ 100%
• Gallium Arsenide 100%
• Silicon Nitride 100%
• As-deposited 100%
• Semiconductor Interfaces 100%
• Metal-insulator-semiconductor 100%
• High Temperature 40%
• GaAs Surface 40%
• Low Temperature 20%
• Crystallinity 20%
• Growth Temperature 20%
• Stoichiometry 20%
• Surface Morphology 20%
• Scanning Tunneling Microscope 20%
• Crystal Quality 20%
• Si Deposition 20%
• Conductance Measurement 20%
• Interface Traps 20%
• High Temperature Anneal 20%
• Si Layer 20%
• Metal-insulator-semiconductor Structures 20%
• Metal-insulator-metal Capacitor 20%
• High Crystal Quality 20%
• Si Interlayer 20%

Material Science

• Gallium Arsenide 100%
• Silicon Nitride 100%
• Surface (Surface Science) 28%
• Density 14%
• Monolayers 14%
• Surface Morphology 14%
• Capacitor 14%
• Semiconductor Structure 14%