Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier

Michael M. Wong, Uttiya Chowdhury, Delphine Sicault, David T. Becher, Jonathan C. Denyszyn, Jin Ho Choi, Ting Gang Zhu, Milton Feng, Russell D. Dupuis

Research output: Contribution to journalLetter

Abstract

The improved performance of AlGaN/GaN heterojunction field-effect transistors using a delta-doping approach along with an AlN binary barrier is reported. Low-pressure metalorganic chemical vapor deposition was used to grow the epitaxial heterostructures on semi-insulating SiC substrates. The maximum carrier mobility of μ = 1,066 cm2/V-s and sheet carrier density of ns ∼ 2.30 × 1013 cm-2 yields a large nsμ product of 2.45 × 1016 V-s. Devices with 0.15 μm gate lengths exhibited a maximum current density of IDSmax = 1.82 A/mm (at VG = +1 V) and a peak transconductance of gm = 331 mS/mm. Furthermore, fT ∼ 55 GHz and fmax ∼ 115 GHz were measured.

Original languageEnglish (US)
Pages (from-to)L353-L355
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number4 A
StatePublished - Apr 1 2003

Keywords

  • Delta doping
  • Gallium nitride
  • HEMT
  • HFET
  • High electron mobility transistors
  • MOCVD growth

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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  • Cite this

    Wong, M. M., Chowdhury, U., Sicault, D., Becher, D. T., Denyszyn, J. C., Choi, J. H., Zhu, T. G., Feng, M., & Dupuis, R. D. (2003). Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier. Japanese Journal of Applied Physics, Part 2: Letters, 42(4 A), L353-L355.