Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier

Michael M. Wong; Uttiya Chowdhury; Delphine Sicault; David T. Becher; Jonathan C. Denyszyn; Jin Ho Choi; Ting Gang Zhu; Milton Feng; Russell D. Dupuis

doi:10.1143/jjap.42.l353

Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier

Michael M. Wong, Uttiya Chowdhury, Delphine Sicault, David T. Becher, Jonathan C. Denyszyn, Jin Ho Choi, Ting Gang Zhu, Milton Feng, Russell D. Dupuis

Electrical and Computer Engineering

Research output: Contribution to journal › Letter › peer-review

Abstract

The improved performance of AlGaN/GaN heterojunction field-effect transistors using a delta-doping approach along with an AlN binary barrier is reported. Low-pressure metalorganic chemical vapor deposition was used to grow the epitaxial heterostructures on semi-insulating SiC substrates. The maximum carrier mobility of μ = 1,066 cm²/V-s and sheet carrier density of n_s ∼ 2.30 × 10¹³ cm^-2 yields a large n_sμ product of 2.45 × 10¹⁶ V-s. Devices with 0.15 μm gate lengths exhibited a maximum current density of I_DSmax = 1.82 A/mm (at V_G = +1 V) and a peak transconductance of g_m = 331 mS/mm. Furthermore, f_T ∼ 55 GHz and f_max ∼ 115 GHz were measured.

Original language	English (US)
Pages (from-to)	L353-L355
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	4 A
DOIs	https://doi.org/10.1143/jjap.42.l353
State	Published - Apr 1 2003

Keywords

Delta doping
Gallium nitride
HEMT
HFET
High electron mobility transistors
MOCVD growth

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Online availability

10.1143/jjap.42.l353

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Wong, M. M., Chowdhury, U., Sicault, D., Becher, D. T., Denyszyn, J. C., Choi, J. H., Zhu, T. G., Feng, M., & Dupuis, R. D. (2003). Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(4 A), L353-L355. https://doi.org/10.1143/jjap.42.l353

Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier. / Wong, Michael M.; Chowdhury, Uttiya; Sicault, Delphine et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 4 A, 01.04.2003, p. L353-L355.

Research output: Contribution to journal › Letter › peer-review

Wong, MM, Chowdhury, U, Sicault, D, Becher, DT, Denyszyn, JC, Choi, JH, Zhu, TG, Feng, M & Dupuis, RD 2003, 'Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 4 A, pp. L353-L355. https://doi.org/10.1143/jjap.42.l353

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abstract = "The improved performance of AlGaN/GaN heterojunction field-effect transistors using a delta-doping approach along with an AlN binary barrier is reported. Low-pressure metalorganic chemical vapor deposition was used to grow the epitaxial heterostructures on semi-insulating SiC substrates. The maximum carrier mobility of μ = 1,066 cm2/V-s and sheet carrier density of ns ∼ 2.30 × 1013 cm-2 yields a large nsμ product of 2.45 × 1016 V-s. Devices with 0.15 μm gate lengths exhibited a maximum current density of IDSmax = 1.82 A/mm (at VG = +1 V) and a peak transconductance of gm = 331 mS/mm. Furthermore, fT ∼ 55 GHz and fmax ∼ 115 GHz were measured.",

keywords = "Delta doping, Gallium nitride, HEMT, HFET, High electron mobility transistors, MOCVD growth",

author = "Wong, {Michael M.} and Uttiya Chowdhury and Delphine Sicault and Becher, {David T.} and Denyszyn, {Jonathan C.} and Choi, {Jin Ho} and Zhu, {Ting Gang} and Milton Feng and Dupuis, {Russell D.}",

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AU - Wong, Michael M.

AU - Chowdhury, Uttiya

AU - Sicault, Delphine

AU - Becher, David T.

AU - Denyszyn, Jonathan C.

AU - Choi, Jin Ho

AU - Zhu, Ting Gang

AU - Feng, Milton

AU - Dupuis, Russell D.

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N2 - The improved performance of AlGaN/GaN heterojunction field-effect transistors using a delta-doping approach along with an AlN binary barrier is reported. Low-pressure metalorganic chemical vapor deposition was used to grow the epitaxial heterostructures on semi-insulating SiC substrates. The maximum carrier mobility of μ = 1,066 cm2/V-s and sheet carrier density of ns ∼ 2.30 × 1013 cm-2 yields a large nsμ product of 2.45 × 1016 V-s. Devices with 0.15 μm gate lengths exhibited a maximum current density of IDSmax = 1.82 A/mm (at VG = +1 V) and a peak transconductance of gm = 331 mS/mm. Furthermore, fT ∼ 55 GHz and fmax ∼ 115 GHz were measured.

AB - The improved performance of AlGaN/GaN heterojunction field-effect transistors using a delta-doping approach along with an AlN binary barrier is reported. Low-pressure metalorganic chemical vapor deposition was used to grow the epitaxial heterostructures on semi-insulating SiC substrates. The maximum carrier mobility of μ = 1,066 cm2/V-s and sheet carrier density of ns ∼ 2.30 × 1013 cm-2 yields a large nsμ product of 2.45 × 1016 V-s. Devices with 0.15 μm gate lengths exhibited a maximum current density of IDSmax = 1.82 A/mm (at VG = +1 V) and a peak transconductance of gm = 331 mS/mm. Furthermore, fT ∼ 55 GHz and fmax ∼ 115 GHz were measured.

KW - Delta doping

KW - Gallium nitride

KW - HEMT

KW - HFET

KW - High electron mobility transistors

KW - MOCVD growth

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Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier

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Keywords

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