Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier

Michael M. Wong, Uttiya Chowdhury, Delphine Sicault, David T. Becher, Jonathan C. Denyszyn, Jin Ho Choi, Ting Gang Zhu, Milton Feng, Russell D. Dupuis

Research output: Contribution to journalLetter

Abstract

The improved performance of AlGaN/GaN heterojunction field-effect transistors using a delta-doping approach along with an AlN binary barrier is reported. Low-pressure metalorganic chemical vapor deposition was used to grow the epitaxial heterostructures on semi-insulating SiC substrates. The maximum carrier mobility of μ = 1,066 cm2/V-s and sheet carrier density of ns ∼ 2.30 × 1013 cm-2 yields a large nsμ product of 2.45 × 1016 V-s. Devices with 0.15 μm gate lengths exhibited a maximum current density of IDSmax = 1.82 A/mm (at VG = +1 V) and a peak transconductance of gm = 331 mS/mm. Furthermore, fT ∼ 55 GHz and fmax ∼ 115 GHz were measured.

Original languageEnglish (US)
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number4 A
StatePublished - Apr 1 2003

Fingerprint

Field effect transistors
Heterojunctions
heterojunctions
field effect transistors
Doping (additives)
Low pressure chemical vapor deposition
Carrier mobility
Metallorganic chemical vapor deposition
Transconductance
transconductance
carrier mobility
metalorganic chemical vapor deposition
Carrier concentration
Current density
low pressure
current density
Substrates
products

Keywords

  • Delta doping
  • Gallium nitride
  • HEMT
  • HFET
  • High electron mobility transistors
  • MOCVD growth

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Wong, M. M., Chowdhury, U., Sicault, D., Becher, D. T., Denyszyn, J. C., Choi, J. H., ... Dupuis, R. D. (2003). Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier. Japanese Journal of Applied Physics, Part 2: Letters, 42(4 A).

Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier. / Wong, Michael M.; Chowdhury, Uttiya; Sicault, Delphine; Becher, David T.; Denyszyn, Jonathan C.; Choi, Jin Ho; Zhu, Ting Gang; Feng, Milton; Dupuis, Russell D.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 4 A, 01.04.2003.

Research output: Contribution to journalLetter

Wong, MM, Chowdhury, U, Sicault, D, Becher, DT, Denyszyn, JC, Choi, JH, Zhu, TG, Feng, M & Dupuis, RD 2003, 'Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier', Japanese Journal of Applied Physics, Part 2: Letters, vol. 42, no. 4 A.
Wong, Michael M. ; Chowdhury, Uttiya ; Sicault, Delphine ; Becher, David T. ; Denyszyn, Jonathan C. ; Choi, Jin Ho ; Zhu, Ting Gang ; Feng, Milton ; Dupuis, Russell D. / Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier. In: Japanese Journal of Applied Physics, Part 2: Letters. 2003 ; Vol. 42, No. 4 A.
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AU - Becher, David T.

AU - Denyszyn, Jonathan C.

AU - Choi, Jin Ho

AU - Zhu, Ting Gang

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