Abstract
The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (Vgs). Increasing Vgs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.
Original language | English (US) |
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Pages (from-to) | 529-531 |
Number of pages | 3 |
Journal | IEEE Transactions on Electron Devices |
Volume | 49 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2002 |
Keywords
- Deuterium
- Hot-carrier
- Interface trap
- Isotope effect
- Lifetime
- Passivation
- Reliability
- Silicon-on-insulator (SOI)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering