Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

Kangguo Cheng, Jinju Lee, Karl Hess, Joseph W. Lyding, Young Kwang Kim, Young Wug Kim, Kwang Pyuk Suh

Research output: Contribution to journalArticlepeer-review

Abstract

The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (Vgs). Increasing Vgs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.

Original languageEnglish (US)
Pages (from-to)529-531
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume49
Issue number3
DOIs
StatePublished - Mar 1 2002

Keywords

  • Deuterium
  • Hot-carrier
  • Interface trap
  • Isotope effect
  • Lifetime
  • Passivation
  • Reliability
  • Silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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