Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

Kangguo Cheng; Jinju Lee; Karl Hess; Joseph W. Lyding; Young Kwang Kim; Young Wug Kim; Kwang Pyuk Suh

doi:10.1109/16.987128

Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

Kangguo Cheng, Jinju Lee, Karl Hess, Joseph W. Lyding, Young Kwang Kim, Young Wug Kim, Kwang Pyuk Suh

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (V_gs). Increasing V_gs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.

Original language	English (US)
Pages (from-to)	529-531
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	3
DOIs	https://doi.org/10.1109/16.987128
State	Published - Mar 2002

Keywords

Deuterium
Hot-carrier
Interface trap
Isotope effect
Lifetime
Passivation
Reliability
Silicon-on-insulator (SOI)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/16.987128

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title = "Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces",

abstract = "The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (Vgs). Increasing Vgs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.",

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AU - Cheng, Kangguo

AU - Lee, Jinju

AU - Hess, Karl

AU - Lyding, Joseph W.

AU - Kim, Young Kwang

AU - Kim, Young Wug

AU - Suh, Kwang Pyuk

PY - 2002/3

Y1 - 2002/3

N2 - The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (Vgs). Increasing Vgs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.

AB - The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (Vgs). Increasing Vgs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.

KW - Deuterium

KW - Hot-carrier

KW - Interface trap

KW - Isotope effect

KW - Lifetime

KW - Passivation

KW - Reliability

KW - Silicon-on-insulator (SOI)

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Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

Abstract

Keywords

ASJC Scopus subject areas

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