Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

Kangguo Cheng; Jinju Lee; Karl Hess; Joseph W. Lyding; Young Kwang Kim; Young Wug Kim; Kwang Pyuk Suh

doi:10.1109/16.987128

Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

Kangguo Cheng, Jinju Lee, Karl Hess, Joseph W. Lyding, Young Kwang Kim, Young Wug Kim, Kwang Pyuk Suh

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (V_gs). Increasing V_gs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.

Original language	English (US)
Pages (from-to)	529-531
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	3
DOIs	https://doi.org/10.1109/16.987128
State	Published - Mar 1 2002

Keywords

Deuterium
Hot-carrier
Interface trap
Isotope effect
Lifetime
Passivation
Reliability
Silicon-on-insulator (SOI)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.987128

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Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces. / Cheng, Kangguo; Lee, Jinju; Hess, Karl; Lyding, Joseph W.; Kim, Young Kwang; Kim, Young Wug; Suh, Kwang Pyuk.

In: IEEE Transactions on Electron Devices, Vol. 49, No. 3, 01.03.2002, p. 529-531.

Research output: Contribution to journal › Article › peer-review

@article{988f1962e016405189ed9f7c651fb614,

title = "Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces",

abstract = "The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (Vgs). Increasing Vgs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.",

keywords = "Deuterium, Hot-carrier, Interface trap, Isotope effect, Lifetime, Passivation, Reliability, Silicon-on-insulator (SOI)",

author = "Kangguo Cheng and Jinju Lee and Karl Hess and Lyding, {Joseph W.} and Kim, {Young Kwang} and Kim, {Young Wug} and Suh, {Kwang Pyuk}",

year = "2002",

month = mar,

day = "1",

doi = "10.1109/16.987128",

language = "English (US)",

volume = "49",

pages = "529--531",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

AU - Cheng, Kangguo

AU - Lee, Jinju

AU - Hess, Karl

AU - Lyding, Joseph W.

AU - Kim, Young Kwang

AU - Kim, Young Wug

AU - Suh, Kwang Pyuk

PY - 2002/3/1

Y1 - 2002/3/1

N2 - The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (Vgs). Increasing Vgs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.

AB - The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (Vgs). Increasing Vgs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices.

KW - Deuterium

KW - Hot-carrier

KW - Interface trap

KW - Isotope effect

KW - Lifetime

KW - Passivation

KW - Reliability

KW - Silicon-on-insulator (SOI)

UR - http://www.scopus.com/inward/record.url?scp=0036494633&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036494633&partnerID=8YFLogxK

U2 - 10.1109/16.987128

DO - 10.1109/16.987128

M3 - Article

AN - SCOPUS:0036494633

VL - 49

SP - 529

EP - 531

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 3

ER -

Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

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Keywords

ASJC Scopus subject areas

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