Improved efficiency of small area selectively oxidized VCSELs

Kent D. Choquette, A. A. Allerman, H. Q. Hou, G. R. Hadley, K. M. Geib, B. E. Hammons

Research output: Contribution to journalConference article

Abstract

We demonstrate increasing slope efficiency with decreasing aperture size for 850 nm selectively oxidized VCSELs as small as 0.5×0.5 μm. Thin apertures are positioned at a longitudinal field null within 3/4-λ thick high index layers.

Original languageEnglish (US)
Pages (from-to)237-238
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
StatePublished - Dec 1 1998
Externally publishedYes
EventProceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC - Nara, Jpn
Duration: Oct 4 1998Oct 8 1998

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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