Abstract
Effects of undoped photo-absorption layers in modified uni-traveling carrier photodiode structures on quantum efficiency and bandwidth are reported. Modified uni-traveling carrier photodiode structures having different undoped photo-absorption layer thicknesses were fabricated and characterized. Efficiency and bandwidth of photodiodes having an optimized undoped photo-absorption layer were larger than those of photodiodes without such a layer, which agrees well with the theoretical analysis of the dynamic behavior of the photodiodes using drift-diffusion model. The results indicate that both the quantum efficiency and bandwidth of the uni-traveling carrier photodiode structures can be extended by incorporating an optimized thickness of undoped photo-absorption layer.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3475-3478 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 4 B |
| DOIs | |
| State | Published - Apr 25 2006 |
Keywords
- Efficiency-bandwidth product
- Pin photodiode
- Uni-traveling carrier photodiode
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy