@inproceedings{2fce23ce4d744fda82fa7702b7d400c7,
title = "Importance of Long-lifetime n-GaInP for High-efficiency GaInP Solar Cells Grown by MBE",
abstract = "We present a systematic photoluminescence (PL) study on the effects of doping and rapid thermal annealing (RTA) conditions on n- and p-GaInP double-heterostructures (DHs) grown by molecular beam epitaxy (MBE). The steady-state photoluminescence (SSPL) intensity of lightly doped n- and p-GaInP both improve significantly after RTA, while in contrast, heavily doped n-GaInP degrades sharply with RTA. Front-junction (FJ) GaInP cells with this heavily doped n-GaInP emitter were severely damaged after RTA, as expected. Replacing the emitter with lightly doped n-GaInP may help to alleviate the degradation and lead to improved MBE-grown GaInP solar cells.",
keywords = "GaInP, MBE, double-hetero structures, rapid thermal annealing",
author = "Yukun Sun and Li, {Brian D.} and Hool, {Ryan D.} and Shizhao Fan and Mijung Kim and Lee, {Minjoo Larry}",
note = "Funding Information: R. D. Hool and B. D. Li were supported by National Aeronautics and Space Administration (NASA) Space Technology Research Fellowships under Grants No. 80NSSC18K1171 and 80NSSC19K1174, respectively. Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",
year = "2020",
month = jun,
day = "14",
doi = "10.1109/PVSC45281.2020.9300745",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "11--13",
booktitle = "2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020",
address = "United States",
}