TY - GEN
T1 - Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing
AU - Rosenbaum, E.
AU - Moazzami, R.
AU - Hu, C.
N1 - Funding Information:
This research is sponsored by SRC, Sandia Laboratories, AMD, MICRO, and ISTO/SDIO under contract N00014-85-K-0603.
Publisher Copyright:
© 1991 IEEE.
PY - 1991
Y1 - 1991
N2 - Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.
AB - Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.
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U2 - 10.1109/VTSA.1991.246679
DO - 10.1109/VTSA.1991.246679
M3 - Conference contribution
AN - SCOPUS:84968107065
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 214
EP - 218
BT - 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
Y2 - 22 May 1991 through 24 May 1991
ER -