Abstract
Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.
| Original language | English (US) |
|---|---|
| Title of host publication | 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 214-218 |
| Number of pages | 5 |
| ISBN (Electronic) | 078030036X, 9780780300361 |
| DOIs | |
| State | Published - Jan 1 1991 |
| Externally published | Yes |
| Event | 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan, Province of China Duration: May 22 1991 → May 24 1991 |
Publication series
| Name | International Symposium on VLSI Technology, Systems, and Applications, Proceedings |
|---|---|
| ISSN (Print) | 1930-8868 |
Conference
| Conference | 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 |
|---|---|
| Country | Taiwan, Province of China |
| City | Taipei |
| Period | 5/22/91 → 5/24/91 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing. / Rosenbaum, E.; Moazzami, R.; Hu, C.
1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 214-218 246679 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing
AU - Rosenbaum, E.
AU - Moazzami, R.
AU - Hu, C.
PY - 1991/1/1
Y1 - 1991/1/1
N2 - Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.
AB - Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.
UR - http://www.scopus.com/inward/record.url?scp=84968107065&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84968107065&partnerID=8YFLogxK
U2 - 10.1109/VTSA.1991.246679
DO - 10.1109/VTSA.1991.246679
M3 - Conference contribution
AN - SCOPUS:84968107065
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 214
EP - 218
BT - 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PB - Institute of Electrical and Electronics Engineers Inc.
ER -