Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing

E. Rosenbaum; R. Moazzami; C. Hu

doi:10.1109/VTSA.1991.246679

Implications of waveform and thickness dependence of SiO₂ breakdown on accelerated testing

E. Rosenbaum, R. Moazzami, C. Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.

Original language	English (US)
Title of host publication	1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	214-218
Number of pages	5
ISBN (Electronic)	078030036X, 9780780300361
DOIs	https://doi.org/10.1109/VTSA.1991.246679
State	Published - 1991
Externally published	Yes
Event	1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan, Province of China Duration: May 22 1991 → May 24 1991

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)	1930-8868

Conference

Conference	1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
Country/Territory	Taiwan, Province of China
City	Taipei
Period	5/22/91 → 5/24/91

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1109/VTSA.1991.246679

Library availability

Discover UIUC Full Text

Cite this

Rosenbaum, E., Moazzami, R., & Hu, C. (1991). Implications of waveform and thickness dependence of SiO₂ breakdown on accelerated testing. In 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991 (pp. 214-218). [246679] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.1991.246679

Implications of waveform and thickness dependence of SiO₂ breakdown on accelerated testing. / Rosenbaum, E.; Moazzami, R.; Hu, C.

1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 214-218 246679 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Rosenbaum, E, Moazzami, R & Hu, C 1991, Implications of waveform and thickness dependence of SiO₂ breakdown on accelerated testing. in 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991., 246679, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 214-218, 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991, Taipei, Taiwan, Province of China, 5/22/91. https://doi.org/10.1109/VTSA.1991.246679

Rosenbaum E, Moazzami R, Hu C. Implications of waveform and thickness dependence of SiO₂ breakdown on accelerated testing. In 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 214-218. 246679. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.1991.246679

Rosenbaum, E. ; Moazzami, R. ; Hu, C. / Implications of waveform and thickness dependence of SiO₂ breakdown on accelerated testing. 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., 1991. pp. 214-218 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{75d01af4e7304b4d8362ee21593546f5,

title = "Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing",

abstract = "Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.",

author = "E. Rosenbaum and R. Moazzami and C. Hu",

note = "Funding Information: This research is sponsored by SRC, Sandia Laboratories, AMD, MICRO, and ISTO/SDIO under contract N00014-85-K-0603. Publisher Copyright: {\textcopyright} 1991 IEEE.; 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 ; Conference date: 22-05-1991 Through 24-05-1991",

year = "1991",

doi = "10.1109/VTSA.1991.246679",

language = "English (US)",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "214--218",

booktitle = "1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991",

address = "United States",

}

TY - GEN

T1 - Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing

AU - Rosenbaum, E.

AU - Moazzami, R.

AU - Hu, C.

PY - 1991

Y1 - 1991

N2 - Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.

AB - Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.

UR - http://www.scopus.com/inward/record.url?scp=84968107065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84968107065&partnerID=8YFLogxK

U2 - 10.1109/VTSA.1991.246679

DO - 10.1109/VTSA.1991.246679

M3 - Conference contribution

AN - SCOPUS:84968107065

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 214

EP - 218

BT - 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991

Y2 - 22 May 1991 through 24 May 1991

ER -