Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing

E. Rosenbaum, R. Moazzami, C. Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.

Original languageEnglish (US)
Title of host publication1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages214-218
Number of pages5
ISBN (Electronic)078030036X, 9780780300361
DOIs
StatePublished - Jan 1 1991
Externally publishedYes
Event1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan, Province of China
Duration: May 22 1991May 24 1991

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
CountryTaiwan, Province of China
CityTaipei
Period5/22/915/24/91

Fingerprint

Oxides
waveforms
breakdown
life (durability)
Testing
oxides
Electric fields
Degradation
pulses
projection
direct current
trapping
degradation
cycles
electric fields

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Rosenbaum, E., Moazzami, R., & Hu, C. (1991). Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing. In 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991 (pp. 214-218). [246679] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.1991.246679

Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing. / Rosenbaum, E.; Moazzami, R.; Hu, C.

1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 214-218 246679 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rosenbaum, E, Moazzami, R & Hu, C 1991, Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing. in 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991., 246679, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 214-218, 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991, Taipei, Taiwan, Province of China, 5/22/91. https://doi.org/10.1109/VTSA.1991.246679
Rosenbaum E, Moazzami R, Hu C. Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing. In 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 214-218. 246679. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.1991.246679
Rosenbaum, E. ; Moazzami, R. ; Hu, C. / Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing. 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., 1991. pp. 214-218 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).
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