Implications of atomic-level manipulation on the Si(100) surface: From enhanced CMOS reliability to molecular nanoelectronics

Keyphrases

• Dangling Bonds 100%
• Ultra-high Vacuum 100%
• Atomic Level 100%
• Scanning Tunneling Microscope 100%
• Si(100) Surface 100%
• Complementary Metal Oxide Semiconductor 100%
• Molecular Nanoelectronics 100%
• Semiconductor Reliability 100%
• Electrical Properties 50%
• Secondary Ion Mass Spectrometry 50%
• Si(111) 50%
• Transistor 50%
• Isotope Effect 50%
• Desorption 50%
• Lithography 50%
• Desorption Process 50%
• Mechanical Properties 50%
• Passivated 50%
• H-surfaces 50%
• Hydrogen Desorption 50%
• Integrated Circuits 50%
• Desorption Mechanism 50%
• Chemical Contrast 50%
• Complementary Metal-oxide-semiconductor Technology 50%
• Nanoelectronics 50%
• Size Scaling 50%
• Arbitrary Geometry 50%
• Hot Electrons 50%
• Molecular Size 50%
• Si-SiO2 Interface 50%
• High Pressure Processing 50%
• CuPc 50%
• Copper Phthalocyanine 50%
• C60 Molecule 50%
• Electron Degradation 50%
• Lifetime Improvement 50%

Engineering

• Nanoelectronics 100%
• Complementary Metal-Oxide-Semiconductor 100%
• Dangling Bond 66%
• Scanning Tunneling Microscope 66%
• Scanning Tunneling Microscopy 33%
• Lithography 33%
• Direct Correlation 33%
• Size Scale 33%
• Electron Degradation 33%
• Integrated Circuit 33%
• Silicon Dioxide 33%
• Hot Electron 33%

Material Science

• Desorption 100%
• Complementary Metal-Oxide-Semiconductor Device 100%
• Surface (Surface Science) 100%
• Electronic Circuit 50%
• Transistor 25%
• Secondary Ion Mass Spectrometry 25%
• Lithography 25%
• Scanning Tunneling Microscopy 25%
• Hot Electron 25%