Abstract
The ultra-high vacuum scanning tunneling microscope (UHVSTM) has been used to induce desorption of H from the Si(100)-2X1:H surface with atomic-level precision. The study of the desorption mechanism led to the discovery of a substantial isotope effect between H and D, which has recently been employed to minimize hot electron degradation at the Si/SiO2 interface in conventional complementary metal-oxide-semiconductor (CMOS) circuits. This paper will reveal secondary ion mass spectroscopy (SIMS) data that show a direct correlation between D incorporation at this interface and transistor lifetime. D incorporation can be enhanced via high-pressure processing, which has led to lifetime improvements in excess of 700× for Samsung's latest 0.18 μm, 1.5 V CMOS technology. In addition to enhancing current integrated circuits, UHVSTM-induced hydrogen desorption has aided the development of nanoelectronics on the molecular-size scale. Feedback-controlled lithography (FCL) has refined the desorption process to the point where templates of individual dangling bonds can be generated in arbitrary geometries. The chemical contrast between dangling bonds and H-passivated Si is then utilized to isolate individual copper phthalocyanine (CuPc) and C60 molecules on the Si(100) surface. Following isolation, STM spectroscopy has characterized the mechanical and electrical properties of these molecules with intra-molecular precision.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 583-591 |
| Number of pages | 9 |
| Journal | Superlattices and Microstructures |
| Volume | 27 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2000 |
| Event | 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999 |
Fingerprint
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Implications of atomic-level manipulation on the Si(100) surface : From enhanced CMOS reliability to molecular nanoelectronics. / Hersam, M. C.; Lee, J.; Guisinger, N. P.; Lyding, Joseph W.
In: Superlattices and Microstructures, Vol. 27, No. 5, 05.2000, p. 583-591.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Implications of atomic-level manipulation on the Si(100) surface
T2 - From enhanced CMOS reliability to molecular nanoelectronics
AU - Hersam, M. C.
AU - Lee, J.
AU - Guisinger, N. P.
AU - Lyding, Joseph W
PY - 2000/5
Y1 - 2000/5
N2 - The ultra-high vacuum scanning tunneling microscope (UHVSTM) has been used to induce desorption of H from the Si(100)-2X1:H surface with atomic-level precision. The study of the desorption mechanism led to the discovery of a substantial isotope effect between H and D, which has recently been employed to minimize hot electron degradation at the Si/SiO2 interface in conventional complementary metal-oxide-semiconductor (CMOS) circuits. This paper will reveal secondary ion mass spectroscopy (SIMS) data that show a direct correlation between D incorporation at this interface and transistor lifetime. D incorporation can be enhanced via high-pressure processing, which has led to lifetime improvements in excess of 700× for Samsung's latest 0.18 μm, 1.5 V CMOS technology. In addition to enhancing current integrated circuits, UHVSTM-induced hydrogen desorption has aided the development of nanoelectronics on the molecular-size scale. Feedback-controlled lithography (FCL) has refined the desorption process to the point where templates of individual dangling bonds can be generated in arbitrary geometries. The chemical contrast between dangling bonds and H-passivated Si is then utilized to isolate individual copper phthalocyanine (CuPc) and C60 molecules on the Si(100) surface. Following isolation, STM spectroscopy has characterized the mechanical and electrical properties of these molecules with intra-molecular precision.
AB - The ultra-high vacuum scanning tunneling microscope (UHVSTM) has been used to induce desorption of H from the Si(100)-2X1:H surface with atomic-level precision. The study of the desorption mechanism led to the discovery of a substantial isotope effect between H and D, which has recently been employed to minimize hot electron degradation at the Si/SiO2 interface in conventional complementary metal-oxide-semiconductor (CMOS) circuits. This paper will reveal secondary ion mass spectroscopy (SIMS) data that show a direct correlation between D incorporation at this interface and transistor lifetime. D incorporation can be enhanced via high-pressure processing, which has led to lifetime improvements in excess of 700× for Samsung's latest 0.18 μm, 1.5 V CMOS technology. In addition to enhancing current integrated circuits, UHVSTM-induced hydrogen desorption has aided the development of nanoelectronics on the molecular-size scale. Feedback-controlled lithography (FCL) has refined the desorption process to the point where templates of individual dangling bonds can be generated in arbitrary geometries. The chemical contrast between dangling bonds and H-passivated Si is then utilized to isolate individual copper phthalocyanine (CuPc) and C60 molecules on the Si(100) surface. Following isolation, STM spectroscopy has characterized the mechanical and electrical properties of these molecules with intra-molecular precision.
UR - http://www.scopus.com/inward/record.url?scp=0034187886&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034187886&partnerID=8YFLogxK
U2 - 10.1006/spmi.2000.0854
DO - 10.1006/spmi.2000.0854
M3 - Conference article
AN - SCOPUS:0034187886
VL - 27
SP - 583
EP - 591
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
IS - 5
ER -