Implications for ultrafast reflection electron diffraction from temporal and spatial evolution of transient electric fields

Understanding interaction of ultrafast pulsed laser with matter is critical for probing ultrafast processes in materials science, understanding the physics of laser ablation and the laser induced non-equilibrium carrier dynamics in metals and semiconductors, including plasmonics. When an intense laser pulse of femtoseconds (fs) in duration hits the surface of a targeted matter, it excites a hot electron gas. Part of the hot electrons is emitted from the surface in a way similar to thermionic emission. Electrons can also be emitted through multiphoton photoemission (MPPE) or thermally assisted MPPE. The emitted electrons travel at speeds that create transient electric fields (TEFs). To detect TEFs and study the dynamics of emitted electrons, we have developed a time resolved electron beam imaging technique that allows us to measure TEFs above a sample surface at picoseconds time resolution. We have also developed a model of the TEFs based on the propagation of emitted electrons and the percentage of electrons escaping from the surface. We examine the significance of TEFs for ultrafast reflection electron diffraction by examining anomalous effects in ultrafast reflection high energy electron diffraction (RHEED) of silicon surfaces.