Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x < y) virtual substrate

Jongwan Jung; Minjoo L. Lee; Shaofeng Yu; A. Fitzgerald; D. A. Antoniadis

doi:10.1109/LED.2003.814028

Implementation of both high-hole and electron mobility in strained Si/strained Si_1-yGe_y on relaxed Si_1-xGe_x (x < y) virtual substrate

Jongwan Jung, Minjoo L. Lee, Shaofeng Yu, A. Fitzgerald, D. A. Antoniadis

Research output: Contribution to journal › Letter › peer-review

Abstract

High-hole and electron mobility in complementary channels in strained silicon (Si) on top of strained Si_0.4Ge_0.6, both grown on a relaxed Si_0.7Ge_0.3 virtual substrate is shown for the first time. The buried Si_0.4Ge_0.6 serves as a high-mobility p-channel, and the strained-Si cap serves as a high-mobility n-channel. The effective mobility, measured in devices with a 20-μm gate length and 3.8-nm gate oxide, shows about 2.2∼2.5 and 2.0 times enhancement in hole and electron mobility, respectively, across a wide vertical field range. In addition, it is found that as the Si cap thickness decreased, PMOS transistors exhibited increased mobility especially at medium - and high-hole density in this heterostructure.

Original language	English (US)
Pages (from-to)	460-462
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	7
DOIs	https://doi.org/10.1109/LED.2003.814028
State	Published - Jul 2003
Externally published	Yes

Keywords

Dual heterostructure
Effective mobility
SiGe
Strain
Virtual substrate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2003.814028

Library availability

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Cite this

@article{7532433318ce4d8498afdb35ed8149e6,

title = "Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x < y) virtual substrate",

abstract = "High-hole and electron mobility in complementary channels in strained silicon (Si) on top of strained Si0.4Ge0.6, both grown on a relaxed Si0.7Ge0.3 virtual substrate is shown for the first time. The buried Si0.4Ge0.6 serves as a high-mobility p-channel, and the strained-Si cap serves as a high-mobility n-channel. The effective mobility, measured in devices with a 20-μm gate length and 3.8-nm gate oxide, shows about 2.2∼2.5 and 2.0 times enhancement in hole and electron mobility, respectively, across a wide vertical field range. In addition, it is found that as the Si cap thickness decreased, PMOS transistors exhibited increased mobility especially at medium - and high-hole density in this heterostructure.",

keywords = "Dual heterostructure, Effective mobility, SiGe, Strain, Virtual substrate",

author = "Jongwan Jung and Lee, {Minjoo L.} and Shaofeng Yu and A. Fitzgerald and Antoniadis, {D. A.}",

note = "Funding Information: Manuscript received March 12, 2002; revised April 21, 2003. This work was sponsored by Grants from DARPA, SMA, and MARCO. The review of this letter was arranged by Editor B. Yu.",

year = "2003",

month = jul,

doi = "10.1109/LED.2003.814028",

language = "English (US)",

volume = "24",

pages = "460--462",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

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T1 - Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x < y) virtual substrate

AU - Jung, Jongwan

AU - Lee, Minjoo L.

AU - Yu, Shaofeng

AU - Fitzgerald, A.

AU - Antoniadis, D. A.

N1 - Funding Information: Manuscript received March 12, 2002; revised April 21, 2003. This work was sponsored by Grants from DARPA, SMA, and MARCO. The review of this letter was arranged by Editor B. Yu.

PY - 2003/7

Y1 - 2003/7

N2 - High-hole and electron mobility in complementary channels in strained silicon (Si) on top of strained Si0.4Ge0.6, both grown on a relaxed Si0.7Ge0.3 virtual substrate is shown for the first time. The buried Si0.4Ge0.6 serves as a high-mobility p-channel, and the strained-Si cap serves as a high-mobility n-channel. The effective mobility, measured in devices with a 20-μm gate length and 3.8-nm gate oxide, shows about 2.2∼2.5 and 2.0 times enhancement in hole and electron mobility, respectively, across a wide vertical field range. In addition, it is found that as the Si cap thickness decreased, PMOS transistors exhibited increased mobility especially at medium - and high-hole density in this heterostructure.

AB - High-hole and electron mobility in complementary channels in strained silicon (Si) on top of strained Si0.4Ge0.6, both grown on a relaxed Si0.7Ge0.3 virtual substrate is shown for the first time. The buried Si0.4Ge0.6 serves as a high-mobility p-channel, and the strained-Si cap serves as a high-mobility n-channel. The effective mobility, measured in devices with a 20-μm gate length and 3.8-nm gate oxide, shows about 2.2∼2.5 and 2.0 times enhancement in hole and electron mobility, respectively, across a wide vertical field range. In addition, it is found that as the Si cap thickness decreased, PMOS transistors exhibited increased mobility especially at medium - and high-hole density in this heterostructure.

KW - Dual heterostructure

KW - Effective mobility

KW - SiGe

KW - Strain

KW - Virtual substrate

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