TY - JOUR
T1 - Impact of nanostructure research on conventional solid-state electronics
T2 - The giant isotope effect in hydrogen desorption and CMOS lifetime
AU - Hess, K.
AU - Register, L. F.
AU - Tuttle, B.
AU - Lyding, J.
AU - Kizilyalli, I. C.
N1 - Funding Information:
K.H. and L.F.R. were supported by the Office of Naval Research and the Army Research Office. B.T. acknowledges support from the National Center for Supercomputing Applications, the Department of Energy (grant DEFG 02-96-ER45439) and Stanford University (DARPA contract DABT63-94-C-0055). J.L. was supported by the Office of Naval Research.
PY - 1998/10/16
Y1 - 1998/10/16
N2 - A theory of desorption of silicon-hydrogen/deuterium bonds and of depassivation of the silicon-oxide interface of CMOS integrate circuits is presented. First, the physics of two competing depassivation mechanisms and the hydrogen/deuterium isotope effect for each are discussed in the light of recent STM and MOS device studies. A phenomenological model of depassivation in MOS devices based on STM data then is presented that addresses the potential significance of these competing desorption mechanisms and their respective isotope effects on device reliability and lifetime. Finally, initial work to develop a more rigorous, first-principles theory of desorption is described. In the process it is demonstrated that experimental and theoretical methods of nanostructure physics have a direct relevance to conventional silicon-based integrated circuit technology.
AB - A theory of desorption of silicon-hydrogen/deuterium bonds and of depassivation of the silicon-oxide interface of CMOS integrate circuits is presented. First, the physics of two competing depassivation mechanisms and the hydrogen/deuterium isotope effect for each are discussed in the light of recent STM and MOS device studies. A phenomenological model of depassivation in MOS devices based on STM data then is presented that addresses the potential significance of these competing desorption mechanisms and their respective isotope effects on device reliability and lifetime. Finally, initial work to develop a more rigorous, first-principles theory of desorption is described. In the process it is demonstrated that experimental and theoretical methods of nanostructure physics have a direct relevance to conventional silicon-based integrated circuit technology.
KW - Density functional theory for condensed matter
KW - Hydrogen passivation of defects
KW - Semiconductor-oxide interfaces
KW - Solid state transistors
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U2 - 10.1016/S1386-9477(98)00211-2
DO - 10.1016/S1386-9477(98)00211-2
M3 - Article
AN - SCOPUS:0032180424
SN - 1386-9477
VL - 3
SP - 1
EP - 7
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1-3
ER -